Medium power NPN transistor JTD JTDMMBT5551 for switching and amplification in compact surface mount

Key Attributes
Model Number: JTDMMBT5551
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
300MHz
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
160V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
JTDMMBT5551
Package:
SOT-323
Product Description

MMBT5551 TRANSISTOR (NPN)

The MMBT5551 is an NPN transistor designed for medium power amplification and switching applications. It features a complementary design to the MMST5401 and comes in a small surface mount package.

Product Attributes

  • Brand: JTD
  • Origin: SHENZHEN JTD ELECTRONICS CO.,LTD
  • Material: Plastic-Encapsulate

Technical Specifications

ParameterSymbolTest conditionsMinTypMaxUnit
Collector-Base VoltageVCBO180V
Collector-Emitter VoltageVCEO160V
Emitter-Base VoltageVEBO6V
Collector CurrentIC600mA
Collector Power DissipationPCTa=25200mW
Thermal Resistance Junction To AmbientRJA625/W
Operation Junction and Storage Temperature RangeTJ,Tstg-55+150
Collector-base breakdown voltageV(BR)CBOIC=100A, IE=0180V
Collector-emitter breakdown voltageV(BR)CEO*IC=1mA, IB=0160V
Emitter-base breakdown voltageV(BR)EBOIE=10A, IC=06V
Collector cut-off currentICBOVCB=120V, IE=050nA
Emitter cut-off currentIEBOVEB=4V, IC=050nA
DC current gainhFEVCE=5V, IC=1mA80
VCE=5V, IC=10mA100300
VCE=5V, IC=50mA30
Collector-emitter saturation voltageVCE(sat)IC=50mA, IB=5mA0.2V
IC=10mA, IB=1mA0.15V
Base-emitter saturation voltageVBE(sat)IC=50mA, IB=5mA1V
IC=10mA, IB=1mA1V
Transition frequencyfTVCE=10V,IC=10mA , f=100MHz100300MHz
Collector output capacitanceCobVCB=10V, IE=0, f=1MHz6pF

2507081835_JTD-JTDMMBT5551_C49308268.pdf

Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.