SOT23 Package NPN Transistor Collector Current 0.1A JTD JTD2SC1623W Suitable for Electronic Circuits
Product Overview
The 2SC1623W is a SOT-23 plastic-encapsulated NPN transistor from SHENZHEN JTD ELECTRONICS CO.,LTD. It features a collector current of 0.1A and is complementary to the 2SA812 transistor. This transistor is suitable for various electronic applications requiring amplification and switching.
Product Attributes
- Brand: SHENZHEN JTD ELECTRONICS CO.,LTD
- Origin: Shenzhen
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Collector-base breakdown voltage | V(BR)CBO | IC= 100A, IE=0 | 60 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC= 1mA, IB=0 | 50 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE= 100A, IC=0 | 6 | V | ||
| Collector cut-off current | ICBO | VCB= 60 V , IE=0 | 0.1 | A | ||
| Collector cut-off current | ICEO | VCE= 50V , IB=0 | 0.1 | A | ||
| Emitter cut-off current | IEBO | VEB= 6V , IC=0 | 0.1 | A | ||
| DC current gain | hFE | VCE=6V, IC= 1mA | 200 | 1000 | ||
| DC current gain | hFE | VCE=6V, IC=10mA | 100 | |||
| Collector-emitter saturation voltage | VCE(sat) | IC=100 mA, IB=10mA | 0.3 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=100 mA, IB=10mA | 1.3 | V | ||
| Transition frequency | fT | VCE=6V, IC= 20mA f=30MHz | 150 | MHz |
Maximum Ratings
| Parameter | Symbol | Value | Unit |
| Collector-Base Voltage | VCBO | 60 | V |
| Collector-Emitter Voltage | VCEO | 50 | V |
| Emitter-Base Voltage | VEBO | 6 | V |
| Collector Current | IC | 100 | mA |
| Collector Power Dissipation | PC | 450 | mW |
| Junction Temperature | Tj | 150 | |
| Storage Temperature | Tstg | -55+150 |
hFE Classification
| Rank | Range |
| L4 | 90-180 |
| L5 | 135-270 |
| L6 | 200-400 |
| L7 | 400-600 |
2507171700_JTD-JTD2SC1623W_C49308272.pdf
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