SOT23 Package NPN Transistor Collector Current 0.1A JTD JTD2SC1623W Suitable for Electronic Circuits

Key Attributes
Model Number: JTD2SC1623W
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
6V
Pd - Power Dissipation:
450mW
Transition Frequency(fT):
150MHz
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
JTD2SC1623W
Package:
SOT-23
Product Description

Product Overview

The 2SC1623W is a SOT-23 plastic-encapsulated NPN transistor from SHENZHEN JTD ELECTRONICS CO.,LTD. It features a collector current of 0.1A and is complementary to the 2SA812 transistor. This transistor is suitable for various electronic applications requiring amplification and switching.

Product Attributes

  • Brand: SHENZHEN JTD ELECTRONICS CO.,LTD
  • Origin: Shenzhen
  • Package: SOT-23

Technical Specifications

ParameterSymbolTest ConditionMinTypMaxUnit
Collector-base breakdown voltageV(BR)CBOIC= 100A, IE=060V
Collector-emitter breakdown voltageV(BR)CEOIC= 1mA, IB=050V
Emitter-base breakdown voltageV(BR)EBOIE= 100A, IC=06V
Collector cut-off currentICBOVCB= 60 V , IE=00.1A
Collector cut-off currentICEOVCE= 50V , IB=00.1A
Emitter cut-off currentIEBOVEB= 6V , IC=00.1A
DC current gainhFEVCE=6V, IC= 1mA2001000
DC current gainhFEVCE=6V, IC=10mA100
Collector-emitter saturation voltageVCE(sat)IC=100 mA, IB=10mA0.3V
Base-emitter saturation voltageVBE(sat)IC=100 mA, IB=10mA1.3V
Transition frequencyfTVCE=6V, IC= 20mA f=30MHz150MHz

Maximum Ratings

ParameterSymbolValueUnit
Collector-Base VoltageVCBO60V
Collector-Emitter VoltageVCEO50V
Emitter-Base VoltageVEBO6V
Collector CurrentIC100mA
Collector Power DissipationPC450mW
Junction TemperatureTj150
Storage TemperatureTstg-55+150

hFE Classification

RankRange
L490-180
L5135-270
L6200-400
L7400-600

2507171700_JTD-JTD2SC1623W_C49308272.pdf

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