Silicon PNP Transistor JUXING 2SB772SQ Designed for High Current Output and Low Saturation Voltage in Audio Applications

Key Attributes
Model Number: 2SB772SQ
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
1uA
Pd - Power Dissipation:
10W
Transition Frequency(fT):
80MHz
Type:
PNP
Current - Collector(Ic):
3A
Collector - Emitter Voltage VCEO:
30V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
2SB772SQ
Package:
SOT-89
Product Description

Product Overview

The 2SB772SQ is a silicon PNP power transistor designed for high current output up to 3A with low saturation voltage. It serves as a complement to the 2SD882SQ and is suitable for audio frequency power amplifier and low-speed switching applications.

Product Attributes

  • Brand: TRR
  • Package Type: SOT-89
  • Material: Silicon

Technical Specifications

ParameterSymbolRatingUnitMinTypMax
Absolute Maximum Ratings-VCBO40V
-VCEO30V
-VEBO5V
-IC3A
-ICP7A
-IB0.6A
PD (Ta=25)1W
PD (Tc=25)10W
TJ150
TSTG-55150
Electrical CharacteristicshFE (Group R, at -VCE = 2 V, -IC = 20 mA)30120
hFE (Group Q, at -VCE = 2 V, -IC = 1 A)60200
hFE (Group P, at -VCE = 2 V, -IC = 1 A)100320
hFE (Group E, at -VCE = 2 V, -IC = 1 A)160400
hFE (Group E, at -VCE = 2 V, -IC = 1 A)200-
-ICBO (at -VCB = 30 V)--1
-IEBO (at -VEB = 3 V)--1
-V(BR)CBO (at -IC = 1 mA)40V
-V(BR)CEO (at -IC = 1 mA)30V
-V(BR)EBO (at -IE = 1 mA)5V
-VCE(sat) (at -IC = 2 A, -IB = 200 mA)-0.5V
-VBE(sat) (at -IC = 2 A, -IB = 200 mA)-2V
fT (at -VCE = 5 V, -IC = 100 mA)-80MHz
Cob (at -VCB = 10 V, f = 1 MHz)-55pF

Ordering Information

DevicePackageShipping
2SB772SQSOT-891000PCS

2209091800_JUXING-2SB772SQ_C5158798.pdf

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