30V Dual P Channel MOSFET JSMSEMI AO4805 Featuring Robust Trench DMOS Technology for Power Circuits
Key Attributes
Model Number:
AO4805
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
9A
Operating Temperature -:
-55℃~+150℃
RDS(on):
19mΩ@4.5V,5A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
216pF@15V
Number:
2 P-Channel
Input Capacitance(Ciss):
1.8nF@15V
Pd - Power Dissipation:
2.1W
Gate Charge(Qg):
30nC@15V
Mfr. Part #:
AO4805
Package:
SOP-8
Product Description
AO4805 -30V Dual P-Channel Enhancement-Mode MOSFET
The AO4805 is a -30V dual P-Channel enhancement-mode power MOSFET utilizing advanced trench DMOS technology. This technology is optimized for minimal on-state resistance, superior switching performance, and enhanced robustness against high energy pulses in avalanche and commutation modes. These devices are ideal for high-efficiency, fast-switching applications.
Product Attributes
- Brand: JSMICRO Semiconductor
- Certifications: Pb-Free and Green devices available
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current (TC=25C) | ID | -9 | A | |||
| Drain Current (TC=70C) | ID | -5 | A | |||
| Drain Current Pulsed (a) | IDM | -36 | A | |||
| Power Dissipation (TC=25C) | PD | 2.1 | W | |||
| Power Dissipation Decrease above 25C | 0.017 | W/C | ||||
| Storage Temperature Range | TSTG | -55 | +150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | +150 | C | ||
| Thermal Resistance, Junction-to-Ambient (1) | RΘJA | 62.5 | C/W | |||
| Electrical Characteristics (TA=25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250µA | -30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | TJ=25°C, VDS=-30V, VGS=0V | -1 | µA | ||
| TJ=125°C, VDS=-24V, VGS=0V | -10 | µA | ||||
| Gate-Body Leakage | IGSS | VGS=±20V, VDS=0V | ±100 | nA | ||
| On Characteristics (a) | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=-250µA | -1.2 | -2.5 | V | |
| Drain-Source On-State Resistance | RDS(on) | VGS=-10V, ID=-9.0A | 14 | 18 | mΩ | |
| VGS=-4.5V, ID=-5.0A | 19 | 29 | mΩ | |||
| Forward Transconductance | gfs | VDS=-5V, ID=-9A | 18 | S | ||
| Drain-Source Diode Characteristics (a) | ||||||
| Continuous Source Current | IS | VG=VD=0V, Force Current | -9 | A | ||
| Pulsed Source Current | ISM | -36 | A | |||
| Diode Forward Voltage | VSD | VGS=0V, IS=-1.0A, TJ=25℃ | -1.0 | V | ||
| Dynamic Characteristics (b) | ||||||
| Input Capacitance | Ciss | VDS=-15V, VGS=0V, F=1MHz | 1800 | pF | ||
| Output Capacitance | Coss | 305 | pF | |||
| Reverse Transfer Capacitance | Crss | 216 | pF | |||
| Switching Characteristics (b) | ||||||
| Total Gate Charge | Qg | VDS=-15V, VGS=-10V, ID=-9A | 30 | nC | ||
| Gate-Source Charge | Qgs | 6 | ||||
| Gate-Drain Charge | Qg d | 9 | ||||
| Turn-On Delay Time | Td(on) | VDD=-15V, VGS=-10V, RL=15Ω, ID=-1A, RG=2.5Ω | 10 | ns | ||
| Rise Time | Tr | 26 | ns | |||
| Turn-Off Delay Time | Td(off) | 35 | ns | |||
| Fall Time | Tf | 8 | ns | |||
Applications
- POL Applications
- Load Switch
- LED Applications
2401051656_JSMSEMI-AO4805_C5183840.pdf
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