Plastic Encapsulate MOSFET JSMSEMI AO3401 with performance in switching and low voltage power supply
Key Attributes
Model Number:
AO3401
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.2A
RDS(on):
75mΩ@4.5V,4A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.3V
Reverse Transfer Capacitance (Crss@Vds):
77pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
954pF@15V
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
10nC@4.5V
Mfr. Part #:
AO3401
Package:
SOT-23
Product Description
AO3401 Plastic-Encapsulate MOSFET
This MOSFET offers strong current capacity and low on-resistance, making it suitable for general switching and low-voltage power supply circuits. It is designed for reliable performance in various electronic applications.
Product Attributes
- Brand: JSMICRO Semiconductor
- Model: AO3401
- Material: Plastic-Encapsulate
- Type: MOSFET
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Continuous Drain Current | ID | -4.2 | A | |||
| Power Dissipation | PD | 0.35 | W | |||
| Junction to Ambient Thermal Resistance | RJA | 350 | °C/mW | |||
| Junction Temperature | Tj | 150 | °C | |||
| Storage Temperature | Tstg | -55 | 150 | °C | ||
| Drain-Source Breakdown Voltage | VBR(DSS) | VGS=0V,ID=-250μA | -30 | V | ||
| Gate Threshold Voltage | VGS(th) | ID=-250μA, VGS=VDS | -0.7 | -1.3 | V | |
| Gate Leakage Current | IGSS | VGS=±12V,VDS=0V | ±100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VGS=0V, VDS=-24V | -1 | μA | ||
| Drain-Source On-Resistance | RDS(ON) | VGS=-10V,ID=-4.2A | 65 | mΩ | ||
| Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V,ID=-4A | 75 | mΩ | ||
| Drain-Source On-Resistance | RDS(ON) | VGS=-2.5V,ID=-1A | 90 | mΩ | ||
| Forward Transconductance | gfs | VDS=-5V,ID=-5A | 7 | S | ||
| Input Capacitance | Ciss | VDS=-15V,VGS=0V,f=1MHz | 954 | pF | ||
| Output Capacitance | Coss | VDS=-15V,VGS=0V,f=1MHz | 115 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=-15V,VGS=0V,f=1MHz | 77 | pF | ||
| Total Gate Charge | QG | VDS=-6V,VGS=-4.5V, ID=-2.8A | 5.4 | 10 | nC | |
| Gate-Source Charge | QGS | VDS=-6V,VGS=-4.5V, ID=-2.8A | 0.8 | nC | ||
| Gate-Drain Charge | QGD | VDS=-6V,VGS=-4.5V, ID=-2.8A | 1.1 | nC | ||
| Turn-on Delay Time | td(on) | VDD=-10V,VGEN=-15V, RGEN=6Ω,RL=3.6Ω | 6.3 | ns | ||
| Rise Time | tr | VDD=-10V,VGEN=-15V, RGEN=6Ω,RL=3.6Ω | 3.2 | ns | ||
| Turn-off Delay Time | td(off) | VDD=-10V,VGEN=-15V, RGEN=6Ω,RL=3.6Ω | 38.2 | ns | ||
| Fall Time | tf | VDD=-10V,VGEN=-15V, RGEN=6Ω,RL=3.6Ω | 12 | ns | ||
| Diode Forward Voltage | VSD | IS=-1A,VGS=0V | -1 | V |
2401050929_JSMSEMI-AO3401_C5296722.pdf
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