Durable N Channel MOSFET JSMSEMI AO4406A Featuring High Cell Density Trench Technology for Switching
Key Attributes
Model Number:
AO4406A
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
15A
Operating Temperature -:
-55℃~+150℃
RDS(on):
14mΩ@4.5V,11A
Gate Threshold Voltage (Vgs(th)):
1.9V
Reverse Transfer Capacitance (Crss@Vds):
185pF@15V
Number:
1 N-channel
Pd - Power Dissipation:
3W
Input Capacitance(Ciss):
2.47nF@15V
Gate Charge(Qg):
20.8nC@15V
Mfr. Part #:
AO4406A
Package:
SOP-8
Product Description
Product Overview
The AO4406A is an N-Channel logic enhancement mode power field-effect transistor manufactured using high cell density advanced trench technology. This technology minimizes on-state resistance, making the device suitable for load switching and synchronous buck converter applications, including PWM and gate charge control.
Product Attributes
- Brand: JSMICRO Semiconductor
- Origin: China (implied by page numbering and language)
- Material: High cell density advanced trench technology
- Color: Not specified
- Certifications: Full RoHS compliance, Green Product (G)
Technical Specifications
| Parameter | Condition | Min | Typical | Max | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDSS) | 30 | V | |||
| Gate-Source Voltage (VGSS) | ±20 | V | |||
| Continuous Drain Current (ID) | VGS=10V, TA=25 | 15 | A | ||
| Continuous Drain Current (ID) | VGS=4.5V, TA=25 | 11 | A | ||
| Pulsed Drain Current (IDM) | 40 | A | |||
| Continuous Source Current (IS) | Diode Conduction | 2.0 | A | ||
| Power Dissipation (PD) | TA=25 | 3.0 | W | ||
| Power Dissipation (PD) | TA=70 | 2.1 | W | ||
| Operation Junction Temperature (TJ) | 150 | ||||
| Storage Temperature Range (TSTG) | -55 | +150 | |||
| Thermal Resistance (RJA) | Junction to Ambient | 85 | /W | ||
| Electrical Characteristics | |||||
| Drain-Source Breakdown Voltage (V(BR)DSS) | VGS=0V, ID=250uA | 30 | V | ||
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, ID=250uA | 1.0 | 1.9 | 3.0 | V |
| Gate Leakage Current (IGSS) | VDS=0V, VGS=±20V | ±100 | nA | ||
| Zero Gate Voltage Drain Current (IDSS) | VDS=24V, VGS=0, TJ=55 | 5 | uA | ||
| Drain-Source On-Resistance (RDS(ON)) | VGS=10V, ID=15A | 10.5 | 12 | m | |
| Drain-Source On-Resistance (RDS(ON)) | VGS=4.5V, ID=11A | 14 | 18 | m | |
| Diode Forward Voltage (VSD) | IS=1.0A, VGS=0V | 0.71 | 1.0 | V | |
| Total Gate Charge (Qg) | VDS=15V, VGS=4.5V, ID=14A | 16 | 20.8 | nC | |
| Gate-Source Charge (Qgs) | 5 | 6.5 | |||
| Gate-Drain Charge (Qgd) | 3 | 3.9 | |||
| Input Capacitance (Ciss) | VDS=15V, VGS=0V, f=1MHz | 2470 | pF | ||
| Output Capacitance (Coss) | 325 | pF | |||
| Reverse Transfer Capacitance (Crss) | 185 | pF | |||
| Turn-On Time (td(on)) | VDS=15V, ID=14A, VGEN=10V, RG=6 | 17 | 34 | nS | |
| Rise Time (tr) | 5 | 10 | |||
| Turn-Off Time (td(off)) | 50 | 100 | nS | ||
| Fall Time (tf) | 10 | 20 | |||
2401051656_JSMSEMI-AO4406A_C5155213.pdf
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