20V n channel enhancement mode mosfet JSMSEMI 8205A ideal for high density battery protection circuits
Product Overview
The JSMICRO Semiconductor 8205A is a 20V N-Channel Enhancement-Mode MOSFET designed for high-density, low on-resistance applications. It features low gate drive voltage (2.5V) and low drive current, making it ideal for battery protection, particularly in lithium battery applications. Available in TSSOP-8 and SOT-23-6 packages.
Product Attributes
- Brand: JSMICRO Semiconductor
- Model: 8205A
- Channel Type: N-Channel
- Mode: Enhancement-Mode
- Voltage Rating: 20V
- Package Types: TSSOP-8, SOT-23-6
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typical | Max | Unit |
| Electrical Characteristics | BVDSS | VGS = 0V, ID = 250uA | 20 | -- | -- | V |
| RDS(on) | VGS = 1.8V,ID = 2.0A | -- | 53.0 | 75.0 | m | |
| RDS(on) | VGS = 2.5V,ID = 3.5A | -- | 30.0 | 38.0 | m | |
| RDS(on) | VGS = 4.5V,ID = 4.5A | -- | 22.0 | 28.0 | m | |
| VGS(th) | VDS = VGS, ID = 250uA | 0.5 | -- | 1.5 | V | |
| Gate Characteristics | IDSS | VDS = 20V, VGS = 0V | -- | -- | 1 | uA |
| IGSS | VGS = 12V, ID=0uA | -- | -- | 100 | nA | |
| Dynamic Characteristics | Qg | VDS = 10V,ID = 6A | -- | 6.24 | 8.11 | nC |
| Maximum Ratings and Thermal Characteristics | VDS | -- | -- | -- | 20 | V |
| VGS | -- | -- | 12 | -- | V | |
| ID | VS@4.5V, TA=25 | -- | -- | 6 | A | |
| IDM | -- | -- | -- | 20 | A | |
| Power Dissipation | PD | TA = 25 | -- | -- | 2 | W |
| PD | TA = 75 | -- | -- | 1.3 | W | |
| Temperature Range | TJ, Tstg | -- | -55 | -- | 150 | |
| Thermal Resistance | RJA | PCB Mounted | -- | -- | 62.5 | /W |
2401051646_JSMSEMI-8205A_C2762931.pdf
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