20V n channel enhancement mode mosfet JSMSEMI 8205A ideal for high density battery protection circuits

Key Attributes
Model Number: 8205A
Product Custom Attributes
Configuration:
Common Drain
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
9A
Operating Temperature -:
-55℃~+150℃
RDS(on):
75mΩ@1.8V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
74.69pF
Number:
2 N-Channel
Input Capacitance(Ciss):
522.3pF@8V
Pd - Power Dissipation:
2W
Gate Charge(Qg):
8.11nC@10V
Mfr. Part #:
8205A
Package:
SOT-23-6
Product Description

Product Overview

The JSMICRO Semiconductor 8205A is a 20V N-Channel Enhancement-Mode MOSFET designed for high-density, low on-resistance applications. It features low gate drive voltage (2.5V) and low drive current, making it ideal for battery protection, particularly in lithium battery applications. Available in TSSOP-8 and SOT-23-6 packages.

Product Attributes

  • Brand: JSMICRO Semiconductor
  • Model: 8205A
  • Channel Type: N-Channel
  • Mode: Enhancement-Mode
  • Voltage Rating: 20V
  • Package Types: TSSOP-8, SOT-23-6

Technical Specifications

ParameterSymbolTest ConditionMinTypicalMaxUnit
Electrical CharacteristicsBVDSSVGS = 0V, ID = 250uA20----V
RDS(on)VGS = 1.8V,ID = 2.0A--53.075.0m
RDS(on)VGS = 2.5V,ID = 3.5A--30.038.0m
RDS(on)VGS = 4.5V,ID = 4.5A--22.028.0m
VGS(th)VDS = VGS, ID = 250uA0.5--1.5V
Gate CharacteristicsIDSSVDS = 20V, VGS = 0V----1uA
IGSSVGS = 12V, ID=0uA----100nA
Dynamic CharacteristicsQgVDS = 10V,ID = 6A--6.248.11nC
Maximum Ratings and Thermal CharacteristicsVDS------20V
VGS----12--V
IDVS@4.5V, TA=25----6A
IDM------20A
Power DissipationPDTA = 25----2W
PDTA = 75----1.3W
Temperature RangeTJ, Tstg---55--150
Thermal ResistanceRJAPCB Mounted----62.5/W

2401051646_JSMSEMI-8205A_C2762931.pdf

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