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quality P Channel Enhancement Mode MOSFET JSMSEMI AO4485 with Low On Resistance and 40V Drain Source Voltage factory
quality P Channel Enhancement Mode MOSFET JSMSEMI AO4485 with Low On Resistance and 40V Drain Source Voltage factory

P Channel Enhancement Mode MOSFET JSMSEMI AO4485 with Low On Resistance and 40V Drain Source Voltage

Key Attributes
Model Number: AO4485
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
11A
Operating Temperature -:
-55℃~+150℃
RDS(on):
12mΩ@10V,11A
Gate Threshold Voltage (Vgs(th)):
1.4V
Reverse Transfer Capacitance (Crss@Vds):
180pF@20V
Number:
1 P-Channel
Input Capacitance(Ciss):
1.5nF@20V
Pd - Power Dissipation:
3.1W
Gate Charge(Qg):
32nC@10V
Mfr. Part #:
AO4485
Package:
SOP-8
Product Description

Product Overview

The AO4485 is a P-Channel Enhancement Mode MOSFET from JSMICRO Semiconductor, offering robust performance with low on-resistance. It features a -40V drain-source voltage and continuous drain current capabilities, making it suitable for power management applications. Available in lead-free and green options, it adheres to RoHS compliance.

Product Attributes

  • Brand: JSMICRO Semiconductor
  • Certifications: RoHS Compliant (Lead Free and Green Devices Available)

Technical Specifications

ParameterSymbolTest ConditionsMin.Typ.Max.Unit
Absolute Maximum Ratings
Drain-Source VoltageVDSS---40V
Gate-Source VoltageVGSS--±20V
Continuous Drain Current (VGS=-10V)ID aTA=25°C---11A
Continuous Drain Current (VGS=-10V)ID aTA=70°C---9A
300µs Pulsed Drain Current (VGS=-10V)IDM a---44A
Diode Continuous Forward CurrentIS a---3A
Avalanche Current, Single pulse (L=0.1mH)IAS b---33A
Avalanche Energy, Single pulse (L=0.1mH)EAS b--54mJ
Maximum Junction TemperatureTJ--150°C
Storage Temperature RangeTSTG-55-150°C
Maximum Power DissipationPD aTA=25°C--3.1W
Maximum Power DissipationPD aTA=70°C--2.0W
Thermal Resistance-Junction to AmbientRθJA at ≤ 10s, Steady State--40°°C/W
Thermal Resistance-Junction to LeadRθJL cSteady State--24°°C/W
Electrical Characteristics
Drain-Source Breakdown VoltageBVDSSVGS=0V, IDS=-250µA-40--V
Zero Gate Voltage Drain CurrentIDSSVDS=-32V, VGS=0V---1µA
Zero Gate Voltage Drain CurrentIDSSTJ=85°C---30µA
Gate Threshold VoltageVGS(th)VDS=VGS, IDS=-250µA-1.4-1.9-2.4V
Gate Leakage CurrentIGSSVGS=±25V, VDS=0V--±100nA
Drain-Source On-state ResistanceRDS(ON) aVGS=-10V, IDS=-11A-1216mΩ
Drain-Source On-state ResistanceRDS(ON) aVGS=-4.5V, IDS=-7A-1622mΩ
Diode Forward VoltageVSD aISD=-1A, VGS=0V---0.75V
Reverse Recovery TimetrrISD=-11A, dlSD/dt=100A/µs-24-ns
Reverse Recovery ChargeQrrISD=-11A, dlSD/dt=100A/µs-18-nC
Gate ResistanceRGVGS=0V,VDS=0V,F=1MHz-2.3-Ω
Input CapacitanceCissVGS=0V, VDS=-20V, Frequency=1.0MHz-1500-pF
Output CapacitanceCossVGS=0V, VDS=-20V, Frequency=1.0MHz-235-pF
Reverse Transfer CapacitanceCrssVGS=0V, VDS=-20V, Frequency=1.0MHz-180-pF
Turn-on Delay Timetd(ON)VDD=-20V, RL=20Ω, IDS=-1A, VGEN=-10V, RG=6Ω-14-ns
Turn-on Rise TimetrVDD=-20V, RL=20Ω, IDS=-1A, VGEN=-10V, RG=6Ω-12-ns
Turn-off Delay Timetd(OFF)VDD=-20V, RL=20Ω, IDS=-1A, VGEN=-10V, RG=6Ω-41-ns
Turn-off Fall TimetfVDD=-20V, RL=20Ω, IDS=-1A, VGEN=-10V, RG=6Ω-22-ns
Total Gate ChargeQgVDS=-20V, VGS=-10V, IDS=-11A-32-nC
Gate-Source ChargeQgsVDS=-20V, VGS=-10V, IDS=-11A-5.2-nC
Gate-Drain ChargeQgdVDS=-20V, VGS=-10V, IDS=-11A-8-nC

Applications: Power Management in LCD TV Inverter.


2401051656_JSMSEMI-AO4485_C5183843.pdf

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