Power management N channel MOSFET JSMSEMI JSM10N15 with low RDS on and fast switching in TO 252 package
Key Attributes
Model Number:
JSM10N15
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
10A
RDS(on):
450mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
17pF
Number:
1 N-channel
Output Capacitance(Coss):
74pF
Pd - Power Dissipation:
54W
Input Capacitance(Ciss):
660pF
Mfr. Part #:
JSM10N15
Package:
TO-252
Product Description
Product Overview
The JSM10N15 is an N-channel MOSFET in a TO-252 plastic package, designed for low voltage applications. It features low RDS(on), low gate charge, low Crss, and fast switching speeds. This product is halogen-free and is suited for automotive circuits, DC/DC converters, high-efficiency power management in portable and battery-operated products, and power management interface cards for TVs or monitors.
Product Attributes
- Brand: JSMICRO Semiconductor
- Origin: China
- Material: Plastic Package
- Certifications: Halogen-Free Product
Technical Specifications
| Parameter | Symbol | Rating | Unit | Test Conditions | Min | Typ | Max | |
| Absolute Maximum Ratings | Drain-Source Voltage | VDS | 150 | V | ||||
| Gate-Source Voltage | VGS | ±20 | V | |||||
| Continuous Drain Current | ID | 10 | A | TC=25°C | ||||
| Pulsed Drain Current | IDM | 25 | A | C | ||||
| Avalanche Current | IAS | 10.8 | A | C | ||||
| Avalanche energy | EAS | 7 | mJ | L=0.1 mH C | ||||
| Power Dissipation | PD | 54 | W | B TC=25°C | ||||
| Junction and Storage Temperature Range | TJ, TSTG | -55 to 150 | °C | |||||
| Maximum Junction-to-Ambient | RθJA | 44 | °C/W | A t ≤ 10s | ||||
| Maximum Junction-to-Ambient | RθJA | 110 | °C/W | AD Steady-State | ||||
| Maximum Junction-to-Case Steady-State | RθJC | 2.8 | °C/W | B | ||||
| Electrical Characteristics | Drain-Source Breakdown Voltage | BVDSS | 150 | V | ID=250µA, VGS=0V | 150 | 155 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=150V, VGS=0V | ||||
| Gate-Body leakage current | IGSS | ±100 | nA | VDS=0V, VGS=±20V | ||||
| Gate Threshold Voltage | VGS(th) | 1 | 3 | V | VDS=VGSID=250µA | |||
| Static Drain-Source On-Resistance | RDS(ON) | 182 | 300 | mΩ | VGS=10V, ID=7A | |||
| Static Drain-Source On-Resistance | RDS(ON) | 183 | 450 | mΩ | VGS=4.5V, ID=6A | |||
| Diode Forward Voltage | VSD | 1 | V | IS=1A,VGS=0V | ||||
| Input Capacitance | Ciss | 660 | pF | VGS=0V, VDS=25V, f=1MHz | ||||
| Output Capacitance | Coss | 74 | pF | VGS=0V, VDS=25V, f=1MHz | ||||
| Reverse Transfer Capacitance | Crss | 17 | pF | VGS=0V, VDS=25V, f=1MHz | ||||
| Gate resistance | Rg | 2.6 | Ω | VGS=0V, VDS=0V, f=1MHz | ||||
| Turn-On Delay Time | tD(on) | 60 | ns | VGS=10V, VDS=75V, ID=5A, RL=14.7Ω, RGEN=50Ω | ||||
| Turn-On Rise Time | tr | 250 | ns | VGS=10V, VDS=75V, ID=5A, RL=14.7Ω, RGEN=50Ω | ||||
| Turn-Off Delay Time | tD(off) | 135 | ns | VGS=10V, VDS=75V, ID=5A, RL=14.7Ω, RGEN=50Ω | ||||
| Turn-Off Fall Time | tf | 135 | ns | VGS=10V, VDS=75V, ID=5A, RL=14.7Ω, RGEN=50Ω | ||||
| Body Diode Reverse Recovery Time | trr | 200 | ns | ISD=4A, dI/dt=100A/ms |
2401051654_JSMSEMI-JSM10N15_C2900591.pdf
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