Low gate charge N Channel MOSFET 200V JSMSEMI IRFB4321PBF ideal for SMPS UPS and motor control applications
Key Attributes
Model Number:
IRFB4321PBF
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
50A
RDS(on):
50mΩ@10V,20A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
101pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
2.8nF
Pd - Power Dissipation:
104W
Gate Charge(Qg):
154nC@160V
Mfr. Part #:
IRFB4321PBF
Package:
TO-220
Product Description
Product Overview
The IRFB4321PBF is a 200V N-Channel MOSFET featuring proprietary new planar technology. It offers low gate charge for minimized switching loss and a fast recovery body diode. This MOSFET is suitable for applications such as DC-DC converters, DC-AC inverters for UPS, SMPS, and motor controls.
Product Attributes
- Brand: JSMICRO Semiconductor
- Product Code: IRFB4321PBF
- Technology: Proprietary New Planar Technology
- Package: TO-220
Technical Specifications
| Parameter | Symbol | Test Conditions | Value | Unit |
| Drain-Source Voltage | VDSS | VGS = 0V, ID = 250A | 200 | V |
| Continuous Drain Current | ID | TC = 25C | 50 | A |
| Pulsed Drain Current | IDM | (note1) | 180 | A |
| Gate-Source Voltage | VGS | ±20 | V | |
| Single Pulse Avalanche Energy | EAS | (note1) | 191 | mJ |
| Avalanche Current | IAS | (note1) | 31 | A |
| Repetitive Avalanche Energy | EAR | (note1) | 124 | mJ |
| Power Dissipation | PD | TC = 25C | 104 | W |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55~+150 | C | |
| Thermal Resistance, Junction-to-Case | RthJC | TO-220 | 1.2 | C/W |
| Thermal Resistance, Junction-to-Ambient | RthJA | TO-220 | 60 | C/W |
| Zero Gate Voltage Drain Current | IDSS | VDS = 200V, VGS = 0V, TJ = 25C | 1 | µA |
| Zero Gate Voltage Drain Current | IDSS | VDS = 200V, VGS = 0V, TJ = 125C | 100 | µA |
| Gate-Source Leakage | IGSS | VGS = ±20V, VDS = 0V | ±100 | nA |
| Gate-Source Threshold Voltage | VGS(th) | VDS = VGS, ID = 250µA | 2.0 -- 4.0 | V |
| Drain-Source On-Resistance | RDS(on) | VGS = 10V, ID = 20A (Note4) | 0.035 -- 0.05 | Ω |
| Forward Transconductance | gfs | VDS = 25V, ID = 20A (Note4) | 16 | S |
| Input Capacitance | Ciss | VGS = 0V, VDS = 25V, f = 1.0MHz | 2800 | pF |
| Output Capacitance | Coss | VGS = 0V, VDS = 25V, f = 1.0MHz | 355 | pF |
| Reverse Transfer Capacitance | Crss | VGS = 0V, VDS = 25V, f = 1.0MHz | 101 | pF |
| Total Gate Charge | Qg | VDD = 160V, ID = 40A, VGS = 15V, RG = 25Ω | 154 | nC |
| Gate-Source Charge | Qgs | VDD = 160V, ID = 40A, VGS = 15V, RG = 25Ω | 13 | nC |
| Gate-Drain Charge | Qgd | VDD = 160V, ID = 40A, VGS = 15V, RG = 25Ω | 58 | nC |
| Turn-on Delay Time | td(on) | VDD = 160V, ID = 40A, VGS = 15V, RG = 25Ω | 46 | ns |
| Turn-on Rise Time | tr | VDD = 160V, ID = 40A, VGS = 15V, RG = 25Ω | 54 | ns |
| Turn-off Delay Time | td(off) | VDD = 160V, ID = 40A, VGS = 15V, RG = 25Ω | 360 | ns |
| Turn-off Fall Time | tf | VDD = 160V, ID = 40A, VGS = 15V, RG = 25Ω | 96 | ns |
| Continuous Source Current | ISD | Integral PN-diode in MOSFET | 50 | A |
| Pulsed Source Current | ISM | 180 | A | |
| Body Forward Voltage | VSD | ISD = 20A, VGS = 0V | 1.4 | V |
| Reverse Recovery Time | trr | VGS = 0V, IF = 10A, diF/dt =100A /µs | 152 | ns |
| Reverse Recovery Charge | Qrr | VGS = 0V, IF = 10A, diF/dt =100A /µs | 1 | µC |
2304251426_JSMSEMI-IRFB4321PBF_C5689128.pdf
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