Complementary MOSFET JSMSEMI AO4612 Featuring N Channel and P Channel with Low Gate Threshold Voltage
Key Attributes
Model Number:
AO4612
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
5A;3.8A
RDS(on):
56mΩ@10V;75mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.3V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
25pF;35pF
Number:
1 N-Channel + 1 P-Channel
Pd - Power Dissipation:
2W
Input Capacitance(Ciss):
450pF;930pF
Output Capacitance(Coss):
60pF;85pF
Gate Charge(Qg):
8.5nC@10V;16nC@10V
Mfr. Part #:
AO4612
Package:
SOIC-8
Product Description
Product Overview
The AO4612 is a 60V Complementary Enhancement Mode Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for applications such as H-bridges and inverters. This device features complementary n-channel and p-channel MOSFETs.
Product Attributes
- Brand: JSMICRO Semiconductor
- Model: AO4612
- Origin: China (implied by page numbering and URL)
Technical Specifications
| Parameter | Symbol | n-channel Min | n-channel Typ | n-channel Max | p-channel Min | p-channel Typ | p-channel Max | Units | Conditions |
| Drain-Source Breakdown Voltage | BVDSS | 60 | -60 | V | ID=250A, VGS=0V (n-channel); ID=-250A, VGS=0V (p-channel) | ||||
| Zero Gate Voltage Drain Current | IDSS | 1 | -5 | A | VDS=60V, VGS=0V (n-channel); VDS=-60V, VGS=0V (p-channel) | ||||
| Gate Threshold Voltage | VGS(th) | 1 | 1.3 | 2 | -1 | -1.65 | -3 | V | ID=250A (n-channel); ID=-250A (p-channel) |
| Static Drain-Source On-Resistance | RDS(ON) | 33 | 42 | 75 | 85 | m | VGS=10V, ID=5.0A (n-channel); VGS=-10V, ID=-3.8A (p-channel) | ||
| Static Drain-Source On-Resistance | RDS(ON) | 42 | 65 | 85 | 145 | m | VGS=4.5V, ID=3.0A (n-channel); VGS=-4.5V, ID=-2.0A (p-channel) | ||
| On state drain current | ID(ON) | 20 | -20 | A | VGS=10V (n-channel); VGS=-10V (p-channel) | ||||
| Forward Transconductance | gFS | 11 | 9 | S | VDS=5V, ID=4.5A (n-channel); VDS=-5V, ID=-3.2A (p-channel) | ||||
| Body-Diode Forward Voltage | VSD | 0.74 | 1 | -0.73 | -1 | V | IS=1A,VGS=0V (n-channel); IS=-1A,VGS=0V (p-channel) | ||
| Maximum Body-Diode Continuous Current | IS | 3 | -3 | A | VGS=0V | ||||
| Gate-Body leakage current | IGSS | 100 | 100 | nA | VDS=0V, VGS= 20V | ||||
| Input Capacitance | Ciss | 450 | 540 | 930 | 1120 | pF | VGS=0V, VDS=30V, f=1MHz (n-channel); VDS=-30V, f=1MHz (p-channel) | ||
| Output Capacitance | Coss | 60 | 85 | pF | VGS=0V, VDS=0V, f=1MHz | ||||
| Reverse Transfer Capacitance | Crss | 25 | 35 | pF | VGS=0V, VDS=0V, f=1MHz | ||||
| Gate resistance | Rg | 1.65 | 2 | 7.2 | 9 | ||||
| Total Gate Charge | Qg(10V) | 8.5 | 10.5 | 16 | 20 | nC | VGS=10V, VDS=30V, ID=4.5A (n-channel); VGS=-10V, VDS=-30V, ID=-3.2A (p-channel) | ||
| Total Gate Charge | Qg(4.5V) | 4.3 | 5.5 | 8 | 10 | nC | VGS=4.5V, VDS=30V, ID=3.0A (n-channel); VGS=-4.5V, ID=-2.0A (p-channel) | ||
| Gate Source Charge | Qgs | 1.6 | 2.5 | nC | |||||
| Gate Drain Charge | Qgd | 2.2 | 3.2 | nC | |||||
| Turn-On DelayTime | tD(on) | 4.7 | 7 | 8 | 12 | ns | VGS=10V, VDS=30V, RL=6.7, RGEN=3 (n-channel); VGS=-10V, VDS=-30V, RL=9.4, RGEN=3 (p-channel) | ||
| Turn-On Rise Time | tr | 2.3 | 4.5 | 3.8 | 7.5 | ns | |||
| Turn-Off DelayTime | tD(off) | 15.7 | 24 | 31.5 | 48 | ns | |||
| Turn-Off Fall Time | tf | 1.9 | 4 | 7.5 | 15 | ns | |||
| Body Diode Reverse Recovery Time | trr | 27.5 | 35 | 27 | 35 | ns | IF=4.5A, dI/dt=100A/s (n-channel); IF=-3.2A, dI/dt=100A/s (p-channel) | ||
| Body Diode Reverse Recovery Charge | Qrr | 32 | 32 | nC | IF=4.5A, dI/dt=100A/s (n-channel); IF=-3.2A, dI/dt=100A/s (p-channel) | ||||
| Power Dissipation | PD | 2 | 1.28 | W | TA=25C (Continuous) | ||||
| Power Dissipation | PD | 1.28 | W | TA=70C (Continuous) | |||||
| Continuous Drain Current | ID | 5.0 | -3.8 | A | TA=25C, VGS=10V (n-channel); TA=25C, VGS=-10V (p-channel) | ||||
| Continuous Drain Current | ID | 3.6 | A | TA=70C, VGS=10V (n-channel) | |||||
| Pulsed Drain Current | IDM | 20 | -20 | A | t 10s | ||||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | -55 | 150 | C | |||
| Maximum Junction-to-Ambient | RJA | 62.5 | 62.5 | C/W | Steady-State (Note A) | ||||
| Maximum Junction-to-Ambient | RJA | 90 | 90 | C/W | TA=70C (Note A) | ||||
| Maximum Junction-to-Lead | RJL | 40 | 40 | C/W | Steady-State |
2506231742_JSMSEMI-AO4612_C49012079.pdf
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