Dual P Channel Power MOSFET JSMSEMI AO4813 Offering Low On State Resistance and Fast Switching Speed
Key Attributes
Model Number:
AO4813
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
7.5A
RDS(on):
40mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
130pF
Number:
2 P-Channel
Output Capacitance(Coss):
235pF
Pd - Power Dissipation:
2.1W
Input Capacitance(Ciss):
1.82nF
Gate Charge(Qg):
17nC@10V
Mfr. Part #:
AO4813
Package:
SOP-8
Product Description
Product Overview
The AO4813 is a -30V dual P-Channel enhancement-mode power MOSFET utilizing advanced trench DMOS technology. This design minimizes on-state resistance and offers superior switching performance, making it ideal for high-efficiency, fast-switching applications. It is well-suited for high energy pulse withstand in avalanche and commutation modes and supports -4.5V gate drive applications.
Product Attributes
- Brand: JSMICRO Semiconductor
- Package: SOP-8
- Certifications: Pb-Free and Green devices available
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | �b1;20 | V | |||
| Drain Current (TC=25C) | ID | -7.5 | A | |||
| Drain Current (TC=70C) | ID | -4.13 | A | |||
| Drain Current – Pulsed | IDM | -30 | A | |||
| Power Dissipation (TC=25C) | PD | 2.1 | W | |||
| Power Dissipation – Decrease above 25C | 0.017 | W/C | ||||
| Storage Temperature Range | TSTG | -55 | +150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | +150 | C | ||
| Thermal Resistance, Junction-to-Ambient | RΘJA | 62.5 | C/W | |||
| Electrical Characteristics (TA=25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250�b5;A | -30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | TJ=25�b0;C, VDS=-30V, VGS=0V | -1 | �b5;A | ||
| Zero Gate Voltage Drain Current | IDSS | TJ=125�b0;C, VDS=-24V, VGS=0V | -10 | �b5;A | ||
| Gate-Body Leakage | IGSS | VGS=�b1;20V, VDS=0V | �b1;100 | nA | ||
| On Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=-250�b5;A | -1.0 | -1.6 | -2.5 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS=-10V, ID=-7.5A | 17 | 24 | mΩ | |
| Drain-Source On-State Resistance | RDS(on) | VGS=-4.5V, ID=-5.0A | 26 | 40 | mΩ | |
| Forward Transconductance | gfs | VDS=-10V, ID=-3A | 6.8 | S | ||
| Drain-Source Diode Characteristics | ||||||
| Continuous Source Current | IS | VG=VD=0V, Force Current | -7.5 | A | ||
| Pulsed Source Current | ISM | -30 | A | |||
| Diode Forward Voltage | VSD | VGS=0V, IS=-1.0A, TJ=25�b0;C | -1.0 | V | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-15V, VGS=0V, F=1MHz | 1250 | 1820 | pF | |
| Output Capacitance | Coss | VDS=-15V, VGS=0V, F=1MHz | 160 | 235 | pF | |
| Reverse Transfer Capacitance | Crss | VDS=-15V, VGS=0V, F=1MHz | 90 | 130 | pF | |
| Switching Characteristics | ||||||
| Total Gate Charge | Qg | VDS=-15V, VGS=-4.5V, ID=-5A | 11 | 17 | nC | |
| Gate-Source Charge | Qgs | VDS=-15V, VGS=-4.5V, ID=-5A | 3.4 | 6 | ||
| Gate-Drain Charge | Qg d | VDS=-15V, VGS=-4.5V, ID=-5A | 4.2 | 8 | ||
| Turn-On Delay Time | Td(on) | VDD=-15V, VGS=-10V, RG=6Ω, ID=-1A | 5.8 | 11 | ns | |
| Rise Time | Tr | VDD=-15V, VGS=-10V, RG=6Ω, ID=-1A | 18.8 | 36 | ns | |
| Turn-Off Delay Time | Td(off) | VDD=-15V, VGS=-10V, RG=6Ω, ID=-1A | 46.9 | 89 | ns | |
| Fall Time | Tf | VDD=-15V, VGS=-10V, RG=6Ω, ID=-1A | 12.3 | 23 | ns | |
2401171559_JSMSEMI-AO4813_C20609406.pdf
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