Medium Power Amplification and Switching Transistor JTD JTDMMDT5551 Dual NPN Plastic Encapsulate Type
Key Attributes
Model Number:
JTDMMDT5551
Product Custom Attributes
Current - Collector Cutoff:
50nA
Emitter-Base Voltage(Vebo):
6V
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
300MHz
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
160V
Mfr. Part #:
JTDMMDT5551
Package:
SOT-363
Product Description
Product Overview
Dual NPN Epitaxial Planar Die Construction Transistor. Features complementary PNP type (MMDT5401) and is ideal for medium power amplification and switching applications.
Product Attributes
- Brand: JTD
- Origin: SHENZHEN JTD ELECTRONICS CO.,LTD
- Material: Plastic-Encapsulate Transistors
- Website: www.szjtdsemi.com
- Revision: Rev-1.0
Technical Specifications
| Parameter | Symbol | Min | Max | Unit | Conditions |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 160 | V | IC=1mA , IB=0 | |
| Collector-Base Breakdown Voltage | V(BR)CBO | 180 | V | IC=100 A,IE=0 | |
| Emitter-Base Breakdown Voltage | V(BR)EBO | 6 | V | IE=10 A, IC=0 | |
| Collector Cut-off Current | ICBO | 0.05 | A | VCB=120V, IE=0 | |
| Emitter Cut-off Current | IEBO | 0.05 | A | VEB=4V, IC=0 | |
| DC Current Gain | hFE | 80 | 300 | VCE=5 V, IC=1mA | |
| DC Current Gain | hFE | 100 | VCE=5 V, IC=10mA | ||
| DC Current Gain | hFE | 30 | VCE=5 V, IC=50mA | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.15 | V | IC=10mA, IB=1mA | |
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.2 | V | IC=50mA, IB=5mA | |
| Base-Emitter Saturation Voltage | VBE(sat) | 1 | V | IC=10mA, IB=1mA | |
| Base-Emitter Saturation Voltage | VBE(sat) | 1 | V | IC=50mA, IB=5mA | |
| Transition Frequency | fT | 100 | 300 | MHz | VCE=10V, IC=10mA,f=100MHz |
| Output Capacitance | Cob | 6 | pF | VCB=10V, IE=0, f=1MHz | |
| Noise Figure | NF | 8 | dB | VCE=5V, IC=0.2mA, RS=1K ,f =1kHz | |
| Collector Current -Continuous | IC | 0.2 | A | ||
| Collector Power Dissipation | PC | 0.2 | W | ||
| Junction Temperature | Tj | 150 | |||
| Storage Temperature | Tstg | -55 | 150 |
2507081835_JTD-JTDMMDT5551_C49308270.pdf
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