JSMSEMI AO8810 JSM N Channel MOSFET with low RDS ON resistance and pulsed drain current capability
Key Attributes
Model Number:
AO8810-JSM
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
7A
RDS(on):
28mΩ@1.8V,5A
Operating Temperature -:
-
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
155pF
Number:
2 N-Channel
Output Capacitance(Coss):
1.95nF
Input Capacitance(Ciss):
1.12nF
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
16nC@4.5V
Mfr. Part #:
AO8810-JSM
Package:
TSSOP-8
Product Description
Product Overview
This high-density N-Channel Enhancement Mode MOSFET process is optimized for minimal on-state resistance, making it ideal for low-voltage applications where low inline power loss is critical. The device features a super high design for extremely low RDS(ON) and is housed in a compact TSSOP8 surface mount package.
Product Attributes
- Brand: JSMICRO Semiconductor
- Product Name: AO8810
- Certifications: Full RoHS compliance
- ESD Rating: 2000V HBM
Technical Specifications
| Symbol | Parameter | Condition | Min | Typ | Max | Unit |
| ABSOLUTE MAXIMUM RATINGS | ||||||
| VDSS | Drain-Source Voltage | 20 | V | |||
| VGSS | Gate-Source Voltage | 10 | V | |||
| ID | Continuous Drain Current | VGS=10V (TA=25) | 7.0 | A | ||
| VGS=10V (TA=75) | 6.0 | A | ||||
| IDM | Pulsed Drain Current | 30 | A | |||
| IS | Continuous Source Current (Diode Conduction) | 1 | A | |||
| PD | Power Dissipation | TA=25 | 1.5 | W | ||
| TA=75 | 1.0 | |||||
| TJ | Operation Junction Temperature | 150 | ||||
| TSTG | Storage Temperature Range | -55 | +150 | |||
| ELECTRICAL CHARACTERISTICS (TA=25 Unless otherwise noted) | ||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250uA | 20 | V | ||
| VGS(th) | Gate Threshold Voltage | VDS=VGS, ID=250uA | 0.4 | 0.6 | 1.0 | V |
| IGSS | Gate Leakage Current | VDS=0V, VGS=8V | 10 | uA | ||
| IDSS | Zero Gate Voltage Drain Current | VDS=20V, VGS=0 | 1 | uA | ||
| ID(ON) | On-State Drain Current | VDS5V, VGS=4.5V | 7 | A | ||
| RDS(ON) | Drain-Source On-Resistance | VGS=4.5V, ID=7A | 10 | 12.5 | m | |
| VGS=4.0V, ID=7A | 11 | 13.5 | ||||
| VGS=3.1V, ID=6.5A | 12 | 14 | ||||
| VGS=2.5V, ID=5.5A | 13 | 16 | ||||
| VGS=1.8V, ID=5A | 14 | 18 | ||||
| Gfs | Forward Transconductance | VDS=5V, ID=7A | 31 | S | ||
| VSD | Diode Forward Voltage | IS=1.0A, VGS=0V | 0.7 | 1.3 | V | |
| Dynamic Parameters | ||||||
| Qg | Total Gate Charge | VDS=10V, VGS=4.5V, ID=7.0A | 16 | nC | ||
| Qgs | Gate-Source Charge | 1.7 | ||||
| Qgd | Gate-Drain Charge | 6.8 | ||||
| Ciss | Input Capacitance | VDS=10V, VGS=0V, f=1MHz | 1120 | pF | ||
| Coss | Output Capacitance | 1950 | ||||
| Crss | Reverse Transfer Capacitance | 155 | ||||
| Td(on) | Turn-On Time | VDS=10V, ID=7.0A, VGEN=5V, RG=3.3 | 7.2 | nS | ||
| 11 | ||||||
| Td(off) | Turn-Off Time | 64 | ||||
| 32 | ||||||
| THERMAL DATA | ||||||
| RJA | Thermal Resistance-Junction to Ambient | 62.5 | /W | |||
2311161802_JSMSEMI-AO8810-JSM_C18189851.pdf
Related Products
Compact surface mount bridge rectifier YONGYUTAI DB157S with plated solderable leads and ABS housing
Product OverviewThis series of bridge rectifiers features glass passivated die construction, offering a low forward voltage drop and high current/surge current capabilities. Designed for surface mount applications, these rectifiers are constructed from UL 94V-0 rated plastic material. They are ...
General purpose Zener diode XZT BZT52B30 featuring planar die construction for medium current electronic
BZT52B2V4 thru BZT52B43 ZENER DIODEThe BZT52B2V4 thru BZT52B43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free ...
Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating
Product OverviewNPN silicon epitaxial planar transistor designed for switching and amplifier applications. It is recommended as a complementary type to the PNP transistor 2N3906. This transistor is also available in the SOT-23 case under the type designation MMBT3904.Product AttributesBrand: Not ...
Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD
Product OverviewThe MG150HF12TLC1 S-M409 is a high-performance IGBT module designed for demanding power electronics applications. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short circuit capability, and an integrated ultra-fast & soft ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
