N Channel MOSFET JSMSEMI AO4406 with SOP 8 Package and Excellent Thermal Resistance Characteristics
Key Attributes
Model Number:
AO4406
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
11A
RDS(on):
10mΩ@10V,11A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
153pF@15V
Number:
1 N-channel
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
-
Mfr. Part #:
AO4406
Package:
SOP-8
Product Description
Product Overview
This N-Channel MOSFET utilizes advanced trench technology and design to deliver excellent RDS(on) with low gate charge. It is suitable for a wide range of applications, featuring high cell density trench technology for ultra-low RDS(ON) and an excellent package for effective heat dissipation.
Product Attributes
- Brand: JSMICRO Semiconductor
- Device Type: N-Channel MOSFET
- Package: SOP-8
- Green Device: Available
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | VDS | 30 | V | |||
| VGS | 20 | V | ||||
| ID | Drain Current Continuous (TA=25) | 11 | A | |||
| ID | Drain Current Continuous (TA=100) | 7 | A | |||
| IDM | Drain Current Pulsed | 36 | A | |||
| EAS | Single Pulse Avalanche Energy | 24.2 | mJ | |||
| PD | Power Dissipation (TA=25) | 1.5 | W | |||
| Thermal Characteristics | RJC | Thermal Resistance, Junction to Case | 25 | /W | ||
| RJA | Thermal Resistance, Junction to Ambient | 85 | /W | |||
| Electrical Characteristics | BVDSS | Drain-Source Breakdown Voltage (VGS=0V,ID=250A) | 30 | --- | --- | V |
| IDSS | Drain-Source Leakage Current (VDS=150V , VGS=0V) | --- | --- | 1 | uA | |
| IGSS | Gate-Source Leakage Current (VGS=20V, VDS=0V) | --- | --- | 100 | nA | |
| VGS(th) | GATE-Source Threshold Voltage (VGS=VDS, ID=250A) | 1.2 | 1.5 | 2.5 | V | |
| RDS(ON) | Static Drain-Source On Resistance (VGS=10V,ID=8A) | --- | 9 | 10 | m | |
| Dynamic Characteristics | Ciss | Input Capacitance (VDS=15V, VGS=0V, f=1MHz) | --- | 940 | 1316 | pF |
| Coss | Output Capacitance (VDS=15V, VGS=0V, f=1MHz) | --- | 131 | 183 | pF | |
| Crss | Reverse Transfer Capacitance (VDS=15V, VGS=0V, f=1MHz) | --- | 109 | 153 | pF | |
| Switching Characteristics | td(on) | Turn-On Delay Time (VDS=15V, RGEN=1.5, VGS=10V, ID=8A) | --- | 4.2 | 8.4 | ns |
| tr | Rise Time | --- | 8.2 | 15 | ns | |
| td(off) | Turn-Off Delay Time | --- | 31 | 62 | ns | |
| tf | Fall Time | --- | 4 | 8 | ns | |
| Gate Charge | Qg | Total Gate Charge | --- | 9.63 | 13.5 | nC |
| Qgs | Gate-Source Charge (VGS=4.5V, VDS=15V, ID=8A) | --- | 3.88 | 5.4 | nC | |
| Qgd | Gate-Drain Miller Charge (VGS=4.5V, VDS=15V, ID=8A) | --- | 3.44 | 4.8 | nC | |
| Drain-Source Diode Characteristics | VSD | Source-Drain Diode Forward Voltage (VGS=0V,IS=1A,TJ=25) | --- | --- | 1 | V |
| IS | Continuous Source Current (VG=VD=0V) | --- | --- | 9 | A | |
| Body Diode Characteristics | Trr | Body Diode Reverse Recovery Time (IF=8A , dI/dt=100A/s , TJ=25) | --- | 8 | --- | Ns |
| Qrr | Body Diode Reverse Recovery Charge | --- | 2.9 | --- | Nc |
2401051656_JSMSEMI-AO4406_C5155212.pdf
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