Electronic Dual PNP Transistor JTD JTDBC857BDW SOT363 Package Ideal for Space Saving Circuit Designs
Key Attributes
Model Number:
JTDBC857BDW
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
15nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
200MHz
Type:
PNP
Number:
2 PNP
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
45V
Mfr. Part #:
JTDBC857BDW
Package:
SOT-363
Product Description
Product Overview
This SOT-363 package contains two PNP transistors, offering a dual transistor configuration. It is designed to reduce component count and board space without mutual interference between the transistors. Suitable for various electronic applications requiring dual PNP functionality.
Product Attributes
- Brand: SHENZHEN JTD ELECTRONICS CO.,LTD
- Origin: China
- Model: JTDBC857BDW
- Marking: 3F
Technical Specifications
| Parameter | Symbol | Test conditions | Min | Typ | Max | Unit | Model |
| Collector-base breakdown voltage | V(BR)CBO | Ic=-10A,IE=0 | -50 | V | JTDBC857BDW | ||
| Collector-emitter breakdown voltage | V(BR)CEO | Ic=-10mA,IB=0 | -45 | V | JTDBC857BDW | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=-10A,IC=0 | -5 | V | JTDBC857BDW | ||
| Collector cut-off current | ICBO | VCB=-30V,IE=0 | -15 | nA | JTDBC857BDW | ||
| DC current gain | hFE | VCE=-5V,IC=-2mA | 125 | 630 | JTDBC857BDW | ||
| Collector-emitter saturation voltage | VCE(sat)(1) | IC=-10mA,IB=-0.5mA | -0.3 | V | JTDBC857BDW | ||
| Collector-emitter saturation voltage | VCE(sat)(2) | IC=-100mA,IB=-5mA | -0.65 | V | JTDBC857BDW | ||
| Base-emitter voltage | VBE(1) | VCE=-5V,IC=-2mA | -0.6 | -0.75 | V | JTDBC857BDW | |
| Base-emitter voltage | VBE(2) | VCE=-5V,IC=-10mA | -0.82 | V | JTDBC857BDW | ||
| Transition frequency | fT | VCE=-5V,IC=-10mA,f=100MHz | 200 | MHz | JTDBC857BDW | ||
| Collector output capacitance | Cob | VCB=-10V,IE=0,f=1MHz | 3.5 | pF | JTDBC857BDW | ||
| Noise figure | NF | VCE=-5V,Ic=-0.2mA, f=1kHZ,Rs=2K,BW=200Hz | 2.5 | dB | JTDBC857BDW | ||
| Collector Power Dissipation | PC | 0.3 | W | JTDBC857BDW | |||
| Thermal Resistance Junction to Ambient | RJA | 417 | /W | JTDBC857BDW | |||
| Junction Temperature | TJ | 150 | JTDBC857BDW | ||||
| Storage Temperature | Tstg | -55 | 150 | JTDBC857BDW |
2504101957_JTD-JTDBC857BDW_C42443498.pdf
Related Products
power control Sensata B612F-2T-YEC module for AC DC variable voltage output applications up to 15KW
Sensata B-2T, B-2 Series Power Modules The Sensata B-2T and B-2 Series Power Modules offer versatile solutions for AC or DC variable voltage output applications, capable of handling up to 15KW. These modules feature eight circuit options and are UL Recognized (E72445), providing reliable performance ...
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
