NPN Bipolar Junction Transistor JTD JTDSS8050W General Purpose Plastic Encapsulate
Key Attributes
Model Number:
JTDSS8050W
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
250mW
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
JTDSS8050W
Package:
SOT-323
Product Description
SS8050W Transistor (NPN)
The SS8050W is an NPN bipolar junction transistor, complementary to the SS8550W. It is designed for general-purpose applications and is marked with 'Y1'.
Product Attributes
- Brand: JTD (SHENZHEN JTD ELECTRONICS CO.,LTD)
- Origin: Shenzhen, China
- Material: Plastic-Encapsulate Transistor
- Package Outline: SOT-323
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | IC= 100A, IE=0 | 40 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC= 0.1mA, IB=0 | 25 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=100A, IC=0 | 5 | V | ||
| Collector cut-off current | ICBO | VCB=40V, IE=0 | 0.1 | A | ||
| Collector cut-off current | ICEO | VCE=20V, IE=0 | 0.1 | A | ||
| Emitter cut-off current | IEBO | VEB= 5V, IC=0 | 0.1 | A | ||
| DC current gain (hFE(1)) | hFE(1) | VCE=1V, IC= 100mA | 120 | 400 | ||
| DC current gain (hFE(2)) | hFE(2) | VCE=1V, IC= 800mA | 40 | |||
| Collector-emitter saturation voltage | VCE(sat) | IC=800mA, IB= 80mA | 0.5 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=800mA, IB= 80mA | 1.2 | V | ||
| Transition frequency | fT | VCE=10V, IC= 50mA, f=30MHz | 100 | MHz | ||
| Collector output capacitance | Cob | VCB=10V,IE=0,f=1MHz | 15 | pF | ||
| Collector-Base Voltage | VCBO | 40 | V | |||
| Collector-Emitter Voltage | VCEO | 25 | V | |||
| Emitter-Base Voltage | VEBO | 5 | V | |||
| Collector Current | IC | 1.5 | A | |||
| Collector Power Dissipation | PC | (Ta=25 unless otherwise noted) | 250 | mW | ||
| Thermal Resistance Junction To Ambient | RJA | 500 | /W | |||
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 | +150 |
2504101957_JTD-JTDSS8050W_C42443449.pdf
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