NPN Transistor JTD JTDBC847BW Plastic Encapsulate Ideal for Switching and AF Amplifier Applications
Key Attributes
Model Number:
JTDBC847BW
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
15nA
Pd - Power Dissipation:
150mW
Transition Frequency(fT):
100MHz
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
JTDBC847BW
Package:
SOT-323
Product Description
Product Overview
The BC846BW, BC847BW, and BC848BW are NPN transistors ideally suited for automatic insertion. They are designed for switching and AF amplifier applications.
Product Attributes
- Brand: SHENZHEN JTD ELECTRONICS CO.,LTD
- Origin: Shenzhen (implied by brand)
- Material: Plastic-Encapsulate Transistors
Technical Specifications
| Model | Parameter | Value | Unit | Test Conditions |
| BC846BW | Collector-Base Voltage (VCBO) | 80 | V | IC= 10A, IE=0 |
| Collector-Emitter Voltage (VCEO) | 65 | V | IC= 10mA, IB=0 | |
| Emitter-Base Voltage (VEBO) | 6 | V | IE= 1 A, IC=0 | |
| Collector Current Continuous (IC) | 0.1 | A | ||
| Collector Power Dissipation (PC) | 150 | mW | Ta=25 | |
| DC current gain (hFE) | 110-420 | VCE= 5V, IC= 10A | ||
| DC current gain (hFE) | 90-270 | VCE= 5V, IC= 2mA | ||
| Collector-emitter saturation voltage (VCE(sat)) | 0.25 | V | IC=10mA, IB=0.5mA | |
| Collector-emitter saturation voltage (VCE(sat)) | 0.6 | V | IC=100mA, IB=5mA | |
| Base-emitter saturation voltage (VBE(sat)) | 0.7 | V | IC=10mA, IB=0.5mA | |
| BC847BW | Collector-Base Voltage (VCBO) | 50 | V | IC= 10A, IE=0 |
| Collector-Emitter Voltage (VCEO) | 45 | V | IC= 10mA, IB=0 | |
| Emitter-Base Voltage (VEBO) | 6 | V | IE= 1 A, IC=0 | |
| Collector Current Continuous (IC) | 0.1 | A | ||
| Collector Power Dissipation (PC) | 150 | mW | Ta=25 | |
| DC current gain (hFE) | 110-420 | VCE= 5V, IC= 10A | ||
| DC current gain (hFE) | 90-270 | VCE= 5V, IC= 2mA | ||
| Collector-emitter saturation voltage (VCE(sat)) | 0.25 | V | IC=10mA, IB=0.5mA | |
| Collector-emitter saturation voltage (VCE(sat)) | 0.6 | V | IC=100mA, IB=5mA | |
| Base-emitter saturation voltage (VBE(sat)) | 0.7 | V | IC=10mA, IB=0.5mA | |
| BC848BW | Collector-Base Voltage (VCBO) | 30 | V | IC= 10A, IE=0 |
| Collector-Emitter Voltage (VCEO) | 30 | V | IC= 10mA, IB=0 | |
| Emitter-Base Voltage (VEBO) | 5 | V | IE= 1 A, IC=0 | |
| Collector Current Continuous (IC) | 0.1 | A | ||
| Collector Power Dissipation (PC) | 150 | mW | Ta=25 | |
| DC current gain (hFE) | 110-420 | VCE= 5V, IC= 10A | ||
| DC current gain (hFE) | 90-270 | VCE= 5V, IC= 2mA | ||
| Collector-emitter saturation voltage (VCE(sat)) | 0.25 | V | IC=10mA, IB=0.5mA | |
| Collector-emitter saturation voltage (VCE(sat)) | 0.6 | V | IC=100mA, IB=5mA | |
| Base-emitter saturation voltage (VBE(sat)) | 0.7 | V | IC=10mA, IB=0.5mA | |
| Operation Junction and Storage Temperature Range (TJ,Tstg): -55-150 | ||||
| Thermal Resistance From Junction To Ambient (RJA): 833 /W | ||||
| Collector Cutoff Current (ICBO): 15 nA (VCB=30V) | ||||
| Base-emitter voltage (VBE(on)): 580-770 mV (VCE= 5V) | ||||
| Transition frequency (fT): 100 MHz (VCE= 5 V, IC= 10mA, f=100MHz) | ||||
| Collector output capacitance (Cob): 4.5 pF (VCB=10V,f=1MHz) | ||||
2507081835_JTD-JTDBC847BW_C49308266.pdf
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