Medium power transistor JTD JTD5551 NPN type optimized for amplification and switching applications
Key Attributes
Model Number:
JTD5551
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
300MHz
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
160V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
JTD5551
Package:
SOT-23
Product Description
Product Overview
The JTD5551 is an NPN transistor designed for medium power amplification and switching applications. It is complementary to the JTD501, offering reliable performance in its intended use cases.
Product Attributes
- Brand: SHENZHEN JTD ELECTRONICS CO.,LTD
- Marking: G1 (Solid dot indicates Green molding compound device)
- Package Type: SOT-23
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector-Base Voltage | VCBO | 180 | V | |||
| Collector-Emitter Voltage | VCEO | 160 | V | |||
| Emitter-Base Voltage | VEBO | 6 | V | |||
| Collector Current | IC | 600 | mA | |||
| Collector Power Dissipation | PC | 300 | mW | |||
| Collector-Base Breakdown Voltage | V(BR)CBO | IC=100A, IE=0 | 180 | V | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | IC=1mA, IB=0 | 160 | V | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | IE=10A, IC=0 | 6 | V | ||
| Collector Cut-off Current | ICBO | VCB=120V, IE=0 | 50 | nA | ||
| Emitter Cut-off Current | IEBO | VEB=4V, IC=0 | 50 | nA | ||
| DC Current Gain | hFE(1) | VCE=5V, IC=1mA | 80 | |||
| hFE(2) | VCE=5V, IC=10mA | 100 | 300 | |||
| hFE(3) | VCE=5V, IC=50mA | 50 | ||||
| Collector-Emitter Saturation Voltage | VCE(sat)1 | IC=10mA, IB=1mA | 0.15 | V | ||
| VCE(sat)2 | IC=50mA, IB=5mA | 0.2 | V | |||
| Base-Emitter Saturation Voltage | VBE(sat)1 | IC=10mA, IB=1mA | 1 | V | ||
| VBE(sat)2 | IC=50mA, IB=5mA | 1 | V | |||
| Transition Frequency | fT | VCE=10V,IC=10mA, f=100MHz | 100 | 300 | MHz | |
| Collector Output Capacitance | Cob | VCB=10V, IE=0, f=1MHz | 6 | pF |
2507081835_JTD-JTD5551_C49308269.pdf
Related Products
NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency
Product OverviewThe MMBTH10 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a breakdown voltage of 30V (V(BR)CBO) and 25V (V(BR)CEO), with a DC current gain (hFE) of 60 at 10V VCE and 4mA IC. Its low collector-emitter saturation voltage (VCE(sat)) of 0...
Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications
Product OverviewThe YJG95G06B is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Split Gate Trench MOSFET technology and a high-density cell design, this transistor offers low RDS(ON) and excellent heat dissipation ...
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
Zener diode YANGJIE BZX584B15VQ with 15 volt Zener voltage and 2 percent tolerance in compact SOD523 package
Product OverviewThe BZX584B3V6Q thru BZX584B36VQ series are small signal Zener diodes designed for general regulation functions. They feature an epoxy case that meets UL-94 V-0 flammability rating and is halogen-free, with Moisture Sensitivity Level 1. These diodes offer Zener voltages ranging from ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
