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quality Complementary Dual Transistors JTD JTDMMDT3946DW NPN and PNP in SOT363 Package for Switching Devices factory
quality Complementary Dual Transistors JTD JTDMMDT3946DW NPN and PNP in SOT363 Package for Switching Devices factory

Complementary Dual Transistors JTD JTDMMDT3946DW NPN and PNP in SOT363 Package for Switching Devices

Key Attributes
Model Number: JTDMMDT3946DW
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
300MHz
Type:
NPN+PNP
Number:
1 NPN + 1 PNP
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Mfr. Part #:
JTDMMDT3946DW
Package:
SOT-363
Product Description

Product Overview

Complementary Pair, Epitaxial Planar Die Construction, ideal for low power amplification and switching. This dual transistor package contains one 3904-type NPN and one 3906-type PNP transistor.

Product Attributes

  • Brand: JTD
  • Origin: SHENZHEN JTD ELECTRONICS CO.,LTD
  • Model: MMDT3946DW
  • Package: SOT-363 Plastic-Encapsulate Transistors

Technical Specifications

ParameterNPN (3904-Type)PNP (3906-Type)
Collector-Base Voltage (V(BR)CBO)60 V-40 V
Collector-Emitter Voltage (V(BR)CEO)40 V-40 V
Emitter-Base Voltage (V(BR)EBO)5 V-5 V
Collector Current - Continuous (IC)0.2 A-0.2 A
Collector Power Dissipation (PC)0.2 W0.2 W
Junction Temperature (TJ)150 150
Storage Temperature (Tstg)-55-150 -55-150
Collector Cutoff Current (ICBO)0.05 A @ VCB=30 V, IE=0-0.05 A @ VCB=-30V,IE=0
Emitter Cutoff Current (IEBO)0.05 A @ VEB=5V , IC=0-0.05 A @ VEB=-5V,IC=0
DC Current Gain (hFE) @ VCE=1V, IC=0.1mA4060
DC Current Gain (hFE) @ VCE=1V, IC=1mA7080
DC Current Gain (hFE) @ VCE=1V, IC=10mA100-300100-300
DC Current Gain (hFE) @ VCE=1V, IC=50mA6060
DC Current Gain (hFE) @ VCE=1V, IC=100mA3030
Collector-Emitter Saturation Voltage (VCE(sat)) @ IC=10 mA, IB=1mA0.2 V-0.25 V
Collector-Emitter Saturation Voltage (VCE(sat)) @ IC=50 mA, IB=5mA0.3 V-0.4 V
Base-Emitter Saturation Voltage (VBE(sat)) @ IC=10 mA, IB=1mA0.65-0.85 V-0.65--0.85 V
Base-Emitter Saturation Voltage (VBE(sat)) @ IC=50 mA, IB=5mA0.95 V-0.95 V
Transition Frequency (fT) @ VCE=20V,IC=20mA, f=100MHz300 MHz250 MHz
Noise Figure (NF) @ VCE=5V,Ic=0.1mA, f=1KHz,Rg=1K5 dB4 dB
Output Capacitance (Cob) @ VCB=5V,IE=0,f=1MHz4 pF4.5 pF
Delay Time (td)35 nS35 nS
Rise Time (tr) @ VCC=3V, VBE=0.5V IC=10mA , IB1=- IB2=1mA35 nS35 nS
Storage Time (tS)200 nS225 nS
Fall Time (tf) @ VCC=3V, IC=10mA IB1=-IB2=1mA50 nS75 nS

2504101957_JTD-JTDMMDT3946DW_C42443487.pdf

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