High Reliability NPN Transistor JUXING S8050 Designed for Various Electronic Amplification and Switching
Key Attributes
Model Number:
S8050
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
150MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
S8050
Package:
SOT-23
Product Description
Product Overview
The S8050 is an NPN bipolar junction transistor (BJT) designed for general-purpose applications. It is complementary to the S8550 transistor, offering a collector current of up to 0.5A. This transistor is suitable for various electronic circuits requiring amplification or switching functions.
Product Attributes
- Brand: S8050 (Marking: J3Y)
- Packaging: SOT-23 Plastic-Encapsulate Transistors
- Complementary to: S8550
- Website: http://www.trr-jx.com
Technical Specifications
| Parameter | Symbol | Test conditions | Min | Typ | Max | Unit |
| Collector-base breakdown voltage | V(BR)CBO | IC= 100A, IE=0 | 40 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=1mA, IB=0 | 25 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=100A, IC=0 | 5 | V | ||
| Collector cut-off current | ICBO | VCB=40 V , IE=0 | 0.1 | A | ||
| Collector cut-off current | ICEO | VCB=20V , IE=0 | 0.1 | A | ||
| Emitter cut-off current | IEBO | VEB= 5V , IC=0 | 0.1 | A | ||
| DC current gain | hFE(1) | VCE=1V, IC= 50mA | 120 | 400 | ||
| hFE(2) | VCE=1V, IC= 500mA | 50 | ||||
| Collector-emitter saturation voltage | VCE(sat) | IC=500 mA, IB= 50mA | 0.6 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=500 mA, IB= 50mA | 1.2 | V | ||
| Transition frequency | fT | VCE=6V, IC= 20mA, f=30MHz | 150 | MHz |
Maximum Ratings
| Parameter | Symbol | Value | Unit |
| Collector-Base Voltage | VCBO | 40 | V |
| Collector-Emitter Voltage | VCEO | 25 | V |
| Emitter-Base Voltage | VEBO | 5 | V |
| Collector Current | IC | 500 | mA |
| Collector Power Dissipation | PC | 300 | mW |
| Thermal Resistance From Junction To Ambient | RJA | 417 | /W |
| Junction Temperature | Tj | 150 | |
| Storage Temperature | Tstg | -55+150 |
hFE Classification
| Rank | Range |
| H | 120-200 |
| J | 200-350 |
| L | 300-400 |
2410121531_JUXING-S8050_C3011093.pdf
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