NPN bipolar transistor JUXING BC817-25 designed for general AF applications featuring low saturation voltage

Key Attributes
Model Number: BC817-25
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
BC817-25
Package:
SOT-23
Product Description

Product Overview

The BC817 is an NPN bipolar transistor designed for general AF applications. It offers high collector current, high current gain, and a low collector-emitter saturation voltage. Its complementary type is the BC807 (PNP).

Product Attributes

  • Brand: Not specified
  • Origin: Not specified
  • Material: Not specified
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

ParameterSymbolTest ConditionsMinTypMaxUnit
Collector-base breakdown voltageVCBOIC= 10A, IE=050V
Collector-emitter breakdown voltageVCEOIC= 10mA, IB=045V
Emitter-base breakdown voltageVEBOIE=1A, IC=05V
Collector cut-off currentICBOVCB= 45 V , IE=00.1A
Emitter cut-off currentIEBOVEB=4V, IC=00.1A
DC current gainhFE(1)VCE=1V, IC= 100mA100600
DC current gainhFE(2)VCE=1V, IC= 500mA40
Collector-emitter saturation voltageVCE(sat)IC= 500mA, IB= 50mA0.7V
Base-emitter saturation voltageVBE(sat)IC= 500mA, IB= 50mA1.2V
Base-emitter voltageVBEVCE= 1 V, IC= 500mA1.2V
Collector capacitanceCobVCB=10V ,f=1MHz10pF
Transition frequencyfTVCE= 5 V, IC=10mA f=100MHz100MHz
Collector-Base VoltageVCBO50V
Collector-Emitter VoltageVCEO45V
Emitter-Base VoltageVEBO5V
Collector CurrentIC500mA
Collector Power DissipationPC300mW
Thermal Resistance Junction To AmbientRJA417/W
Junction TemperatureTj150
Storage TemperatureTstg-55+150

2410121717_JUXING-BC817-25_C5279933.pdf

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