NPN Transistor JUXING BC848A Plastic Encapsulated Perfect for Switching and AF Amplifier Applications
Key Attributes
Model Number:
BC848A
Product Custom Attributes
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
30V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
BC848A
Package:
SOT-23
Product Description
Product Overview
The BC846, BC847, and BC848 are SOT-23 plastic-encapsulated NPN transistors ideally suited for automatic insertion. They are designed for switching and AF amplifier applications.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Plastic Encapsulate
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Model | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector-Base Voltage | BC846 | VCBO | IE=0 | 80 | V | ||
| Collector-Base Voltage | BC847 | VCBO | IE=0 | 50 | V | ||
| Collector-Base Voltage | BC848 | VCBO | IE=0 | 30 | V | ||
| Collector-Emitter Voltage | BC846 | VCEO | IB=0 | 65 | V | ||
| Collector-Emitter Voltage | BC847 | VCEO | IB=0 | 45 | V | ||
| Collector-Emitter Voltage | BC848 | VCEO | IB=0 | 30 | V | ||
| Emitter-Base Voltage | All | VEBO | IC=0 | 6 | V | ||
| Collector Current Continuous | All | IC | 0.1 | A | |||
| Collector Power Dissipation | All | PC | 200 | mW | |||
| Junction Temperature | All | TJ | 150 | ||||
| Storage Temperature | All | Tstg | -55 | +150 | |||
| Thermal Resistance Junction To Ambient | All | RJA | 625 | /W | |||
| Collector-base breakdown voltage | BC846 | VCBO | IC= 10A, IE=0 | 80 | V | ||
| Collector-base breakdown voltage | BC847 | VCBO | IC= 10A, IE=0 | 50 | V | ||
| Collector-base breakdown voltage | BC848 | VCBO | IC= 10A, IE=0 | 30 | V | ||
| Collector-emitter breakdown voltage | BC846 | VCEO | IC= 10mA, IB=0 | 65 | V | ||
| Collector-emitter breakdown voltage | BC847 | VCEO | IC= 10mA, IB=0 | 45 | V | ||
| Collector-emitter breakdown voltage | BC848 | VCEO | IC= 10mA, IB=0 | 30 | V | ||
| Emitter-base breakdown voltage | All | VEBO | IE= 10A, IC=0 | 6 | V | ||
| Collector cut-off current | BC846 | ICBO | VCB=70 V , IE=0 | 0.1 | A | ||
| Collector cut-off current | BC847 | ICBO | VCB=50 V , IE=0 | 0.1 | A | ||
| Collector cut-off current | BC848 | ICBO | VCB=30 V , IE=0 | 0.1 | A | ||
| Emitter cut-off current | All | IEBO | VEB=5 V , IC=0 | 0.1 | A | ||
| DC current gain | BC846A,847A,848A | hFE | VCE= 5V, IC= 2mA | 110 | |||
| DC current gain | BC846B,847B,848B | hFE | VCE= 5V, IC= 2mA | 200 | |||
| DC current gain | BC847C,BC848C | hFE | VCE= 5V, IC= 2mA | 420 | |||
| Collector-emitter saturation voltage | All | VCE(sat) | IC=100mA, IB= 5mA | 0.5 | V | ||
| Base-emitter saturation voltage | All | VBE(sat) | IC=100mA, IB= 5mA | 1.1 | V | ||
| Transition frequency | All | fT | VCE= 5 V, IC= 10mA, f=100MHz | 100 | MHz | ||
| Collector output capacitance | All | Cob | VCB=10V,f=1MHz | 4.5 | pF |
2411220251_JUXING-BC848A_C5279935.pdf
Related Products
High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers
Product Overview The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability ...
Surface mount ZHIDE ES5D rectifier with low leakage current and 100 volt maximum DC blocking voltage
Product OverviewThe ES5A-ES5M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, with guaranteed high-temperature soldering. These rectifiers are RoHS compliant ...
Silicon Bidirectional Trigger Diode YFW LLDB3 for Thyristor Phase Control Circuits Lamp Dimming and Speed Control
Product OverviewThe LL-34 LLDB3/LLDB4 are Silicon Bidirectional Trigger Diodes designed for thyristor phase control circuits. They are suitable for applications such as lamp-dimming, universal-motor speed controls, and heat controls.Product AttributesBrand: GuangDongYoufengMicroelectronicsCo,Ltd...
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
