Low threshold voltage P channel MOSFET KEXIN 2KJ7107DFN with trench technology and 2 kV ESD protection
Key Attributes
Model Number:
2KJ7107DFN
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
65mΩ@1.8V,1A
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
66pF@10V
Number:
1 P-Channel
Input Capacitance(Ciss):
804pF@10V
Pd - Power Dissipation:
515mW
Gate Charge(Qg):
9.5nC@4.5V
Mfr. Part #:
2KJ7107DFN
Package:
DFN2X2-6L
Product Description
Product Overview
The Kexin 2KJ7107DFN is a P-channel MOSFET in a SMD Type package, featuring a low threshold voltage, very fast switching, and Trench MOSFET technology. It offers 2 kV ElectroStatic Discharge (ESD) protection, making it suitable for applications requiring robust performance and protection.
Product Attributes
- Brand: Kexin
- Origin: www.kexin.com.cn
- Material: MOSFET
- Certifications: 2 kV ESD protection
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | VDSS | ID=-10A, VGS=0V | -20 | V | ||
| VDS=-20V, VGS=0V | -1 | V | ||||
| VDS=-20V, VGS=0V, TJ = 150C | -10 | V | ||||
| Gate-Body Leakage Current | IGSS | VDS=0V, VGS=8V | 10 | A | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=-250A | -0.45 | -0.95 | V | |
| Static Drain-Source On-Resistance | RDS(On) | VGS=-4.5V, ID=-2A | 40 | m | ||
| VGS=-4.5V, ID=-2A, TJ = 150C | 65 | m | ||||
| VGS=-2.5V, ID=-1.5A | 65 | m | ||||
| VGS=-1.8V, ID=-1A | 100 | m | ||||
| Zero Gate Voltage Drain Current | IDSS | VGS=0V, VDS=-10V, f=1MHz | 1 | A | ||
| Drain Current | ID | Continuous Drain Current, t 5 s *1 | -6.0 | A | ||
| Pulsed Drain Current (tp10s) *1 | -14.4 | A | ||||
| Forward Transconductance | gFS | VDS=-10V, ID=-2A | 9 | S | ||
| Input Capacitance | Ciss | VDS=-10V, ID=-2A, VGS = 4.5V | 804 | pF | ||
| Output Capacitance | Coss | VDS=-10V, ID=-2A, VGS = 4.5V | 95 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=-10V, ID=-2A, VGS = 4.5V | 66 | pF | ||
| Total Gate Charge | Qg | VDS=-10V, ID=-2A, VGS = 4.5V, RG(ext) = 6 | 6.3 | 9.5 | nC | |
| Gate Source Charge | Qgs | VDS=-10V, ID=-2A, VGS = 4.5V, RG(ext) = 6 | 1.2 | nC | ||
| Gate Drain Charge | Qgd | VDS=-10V, ID=-2A, VGS = 4.5V, RG(ext) = 6 | 0.9 | nC | ||
| Turn-On Delay Time | td(on) | VDS=-10V, ID=-2A, VGS = 4.5V, RG(ext) = 6 | 7 | ns | ||
| Turn-On Rise Time | tr | VDS=-10V, ID=-2A, VGS = 4.5V, RG(ext) = 6 | 15 | ns | ||
| Turn-Off Delay Time | td(off) | VDS=-10V, ID=-2A, VGS = 4.5V, RG(ext) = 6 | 41 | ns | ||
| Turn-Off Fall Time | tf | VDS=-10V, ID=-2A, VGS = 4.5V, RG(ext) = 6 | 14 | ns | ||
| Maximum Body-Diode Continuous Current | IS | -1.3 | A | |||
| Diode Forward Voltage | VSD | ISD=-0.5 A,VGS=0V | -1.2 | V | ||
| Power Dissipation | PD | Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. *1 | 1210 | mW | ||
| Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. *2 | 515 | mW | ||||
| Junction Temperature | TJ | 150 | C | |||
| Junction Storage Temperature Range | Tstg | -55 | 150 | C | ||
| Electrostatic Discharge Voltage | VESD | in free air *3 | 2000 | V | ||
| in free air *2 | 244 | V | ||||
| in free air; t 5 s *1 | 104 | V | ||||
| in free air; t 5 s *1 | 64 | V | ||||
| Thermal Resistance, Junction- to-Ambient | RJA | *2 | 104 | C/W |
2410121848_KEXIN-2KJ7107DFN_C499622.pdf
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