Low On Resistance N Channel Enhancement MOSFET KEXIN KI2300 in SMD Package for Electronic Devices
Key Attributes
Model Number:
KI2300
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-25℃~+150℃
RDS(on):
55mΩ@1.8V,1A
Gate Threshold Voltage (Vgs(th)):
400mV
Reverse Transfer Capacitance (Crss@Vds):
115pF
Number:
1 N-channel
Input Capacitance(Ciss):
887pF
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
16.8nC@4.5V
Mfr. Part #:
KI2300
Package:
SOT-23
Product Description
Product Overview
The SI2300 (KI2300) is a N-Channel Enhancement MOSFET designed for various electronic applications. It features a low on-resistance and is available in a compact SOT-23-3 SMD package, making it suitable for space-constrained designs.
Product Attributes
- Brand: KEXIN
- Origin: China
- Type: SMD Type MOSFET
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | VDSS | VGS=0V,ID=250uA | 20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=20V,VGS=0V | 1 | 100 | uA | |
| Gate-Source Leakage Current | IGSS | VGS=10V,VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS,ID=250uA | 0.4 | 0.7 | 1.0 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V,ID=5.0A | 20 | 25 | m | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=2.5V,ID=4.0A | 35 | m | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS=1.8V,ID=1.0A | 55 | m | ||
| Forward Transconductance | gfs | VDS=5V,ID=3.5A | 5.0 | S | ||
| Input Capacitance | Ciss | VDS=10V,VGS=0V,f=1.0MHz | 887 | pF | ||
| Output Capacitance | Coss | VDS=10V,VGS=0V,f=1.0MHz | 144 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=10V,VGS=0V,f=1.0MHz | 115 | pF | ||
| Turn-On Delay Time | td(on) | VDD=10V,ID=3.5A,VGS=4.5V | 31.8 | ns | ||
| Rise Time | tr | VDD=10V,ID=3.5A,VGS=4.5V | 14.5 | ns | ||
| Turn-Off Delay Time | td(off) | VDD=10V,ID=3.5A,VGS=4.5V | 50.3 | ns | ||
| Fall Time | tf | VDD=10V,ID=3.5A,VGS=4.5V | 31.9 | ns | ||
| Total Gate Charge | Qg | VDS=10V,ID=3.5A,VGS=4.5V | 16.8 | nC | ||
| Gate-Source Charge | Qgs | VDS=10V,ID=3.5A,VGS=4.5V | 2.5 | nC | ||
| Drain-Source Charge | Qgd | VDS=10V,ID=3.5A,VGS=4.5V | 5.4 | nC | ||
| Drain-Source Diode Forward Current | IS | VGS=0V | 1.25 | A | ||
| Drain-Source Diode Forward Voltage | VSD | VGS=0V,IS=1.25A | 0.8 | 1.2 | V | |
| Continuous Drain Current | ID | Ta=25C | 5.0 | A | ||
| Pulsed Drain Current | IDM | 15 | A | |||
| Power Dissipation | PD | Ta=25C | 1.25 | W | ||
| Thermal Resistance Junction-to-Ambient | RthJA | 100 | C/W | |||
| Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | Tstg | -55 | 150 | C |
2409302300_KEXIN-KI2300_C489355.pdf
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