Surface mount device N channel MOSFET KEXIN 2N7002 with low on resistance and high saturation current
Key Attributes
Model Number:
2N7002
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
500mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
7.5Ω@5V,50mA
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
5pF
Number:
1 N-channel
Input Capacitance(Ciss):
50pF
Pd - Power Dissipation:
225mW
Mfr. Part #:
2N7002
Package:
SOT-23
Product Description
Product Overview
The 2N7002 is a Surface Mount Device (SMD) type N-Channel Enhancement MOSFET. It features a high-density cell design for low Rds(on), acting as a voltage-controlled small signal switch. This MOSFET is rugged, reliable, and offers high saturation current capability, making it suitable for various electronic applications.
Product Attributes
- Brand: Kexin
- Origin: China (implied by .cn domain)
- Marking: 702
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Drain-source breakdown voltage | VDSS | VGS=0 V, ID=100 A | 60 | V | ||
| Drain-source leakage current | IDSS | VDS=60 V, VGS=0 V | 80 | nA | ||
| Gate-source leakage current | IGSS | VDS=0 V, VGS=25 V | 80 | nA | ||
| Gate threshold voltage | VGS(th) | VDS=VGS, ID=250 A | 1 | 2.5 | V | |
| Static Drain-Source On-Resistance | RDS(on) | VGS=10 V, ID=500 mA | 7.5 | V | ||
| Static Drain-Source On-Resistance | RDS(on) | VGS=5 V, ID=50 mA | 7.5 | V | ||
| Forward Transconductance | gfs | VDS=10 V, ID=200 mA | 80 | mS | ||
| Input Capacitance | Ciss | VDS=25 V, VGS=0 V, f=1 MHz | 50 | pF | ||
| Output Capacitance | Coss | VDS=25 V, VGS=0 V, f=1 MHz | 25 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=25 V, VGS=0 V, f=1 MHz | 5 | pF | ||
| Turn-On Delay Time | td(on) | VGS=10V, ID =500mA, VDD=25 V, RL=50 , RG=25 | 20 | ns | ||
| Turn-Off Delay Time | td(off) | VGS=10V, ID =500mA, VDD=25 V, RL=50 , RG=25 | 40 | ns | ||
| Source-Drain Diode Forward Voltage | VSD | IS=115 mA, VGS=0 V | 0.55 | 1.2 | V | |
| Drain-Source On-Resistance | RDS(on) | VGS=10V, ID=500mA | 3.75 | |||
| Drain-Source On-Resistance | RDS(on) | VGS=5V, ID=50mA | 0.375 | |||
| Drain-Source Breakdown Voltage | VDSS | VGS=0 V, ID=100 A | 60 | V | ||
| Drain Current | ID | Continuous | 115 | mA | ||
| Power Dissipation | PD | 225 | mW | |||
| Junction Temperature | TJ | 150 | C | |||
| Storage Temperature | Tstg | -55 | 150 | C |
2409302230_KEXIN-2N7002_C489348.pdf
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