Electronic Application P Channel MOSFET KEXIN KI2301 with Low On Resistance and Compact SMD Packaging
Key Attributes
Model Number:
KI2301
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
130mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
87pF
Number:
1 P-Channel
Output Capacitance(Coss):
223pF
Input Capacitance(Ciss):
415pF
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
10nC@4.5V
Mfr. Part #:
KI2301
Package:
SOT-23
Product Description
Product Overview
This document describes the SI2301 (KI2301), a P-Channel Enhancement MOSFET designed for various electronic applications. It features a low on-resistance and is available in an SMD package for surface mounting.
Product Attributes
- Brand: Kexin
- Origin: China (www.kexin.com.cn)
- SMD Type: SI2301 (KI2301)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | VDSS | ID=-250A, VGS=0V | -20 | V | ||
| VDS=-20V, VGS=0V | -1 | V | ||||
| VDS=-20V, VGS=0V, TJ=55 | -10 | V | ||||
| Gate-Body leakage current | IGSS | VDS=0V, VGS=8V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=-250A | -0.45 | -1 | V | |
| RDS(On) Static Drain-Source On-Resistance | RDS(on) | VGS=-4.5V, ID=-2.8A | 105 | 130 | m | |
| VGS=-2.5V, ID=-2.0A | 145 | 190 | m | |||
| Forward Transconductance | gFS | VDS=-5V, ID=-2.8A *1 | 6.5 | S | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-20V, VGS=0V | -1 | A | ||
| Continuous Drain Current | ID | Ta=25 *1 | -2.3 | A | ||
| Ta=70 *1 | -1.5 | A | ||||
| Pulsed Drain Current | IDM | *2 | -10 | A | ||
| Power Dissipation | PD | Ta=25 *1 | 1.25 | W | ||
| Ta=70 *1 | 0.8 | W | ||||
| Thermal Resistance.Junction- to-Ambient | RthJA | *1 | 100 | /W | ||
| Thermal Resistance.Junction- to-Ambient | RthJA | *3 | 166 | /W | ||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature Range | Tstg | -55 | 150 | |||
| Continuous Source Current (Diode Conduction) | Is | -1.6 | A | |||
| Diode Forward Voltage | VSD | IS=-1.6A,VGS=0V | -0.8 | -1.2 | V | |
| Input Capacitance | Ciss | VGS=0V, VDS=-6V, f=1MHz *2 | 415 | pF | ||
| Output Capacitance | Coss | VGS=0V, VDS=-6V, f=1MHz *2 | 223 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=-6V, f=1MHz *2 | 87 | pF | ||
| Total Gate Charge | Qg | VGS=-4.5V, VDS -5V *2 | 5.8 | nC | ||
| Gate Source Charge | Qgs | VGS=-4.5V, VDS -5V *2 | 0.85 | nC | ||
| Gate Drain Charge | Qgd | VGS=-4.5V, VDS -5V *2 | 1.7 | nC | ||
| Turn-On DelayTime | td(on) | VGEN=-4.5V, VDS=-6V, RL=6,RG=6 ID=1.0A *3 | 13 | 25 | ns | |
| Turn-On Rise Time | tr | 36 | 60 | ns | ||
| Turn-Off DelayTime | td(off) | 42 | 70 | ns | ||
| Turn-Off Fall Time | tf | 34 | 60 | ns |
*1 Surface Mounted on FR4 Board, t 5 sec.
*2 Pulse width limited by maximum junction temperature.
*3 Surface Mounted on FR4 Board.
2410122028_KEXIN-KI2301_C369927.pdf
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