Switching applications optimized with KIA Semicon Tech KND3508A 70A 80V N channel MOSFET component
Key Attributes
Model Number:
KND3508A
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-
RDS(on):
11mΩ@10V,35A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
175pF
Number:
1 N-channel
Input Capacitance(Ciss):
2.9nF
Output Capacitance(Coss):
290pF
Pd - Power Dissipation:
-
Gate Charge(Qg):
55nC@10V
Mfr. Part #:
KND3508A
Package:
TO-252
Product Description
Product Overview
The KIA SEMICONDUCTORS 3508A is a 70A, 80V N-CHANNEL MOSFET designed for switching applications and power management in inverter systems. It features low on-state resistance (RDS(on)=9.5m typ. @ VGS=10V), 100% avalanche tested reliability, and is available in a lead-free and green device option (RoHS Compliant).
Product Attributes
- Brand: KIA
- Certifications: RoHS Compliant (available)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units | TO-220/263 | TO-252 |
| Continuous drain current | ID | TC=25C | 70 | A | ✔ | |||
| TC=100C | 46 | A | ✔ | |||||
| Pulsed drain current | IDP | TC=25C | 240 | A | ✔ | ✔ | ||
| Avalanche current | IAS | 70 | A | ✔ | ✔ | |||
| Drain-source voltage | VDSS | 80 | V | ✔ | ✔ | |||
| Gate-source voltage | VGSS | 25 | V | ✔ | ✔ | |||
| Maximum junction temperature | TJ | 175 | C | ✔ | ✔ | |||
| Storage temperature range | TSTG | -55 | 175 | C | ✔ | ✔ | ||
| Drain-source breakdown voltage | BVDSS | VGS=0V,IDS=250uA | 80 | V | ✔ | ✔ | ||
| Zero gate voltage drain current | IDSS | VDS=24V, VGS=0V | 1 | A | ✔ | ✔ | ||
| TJ=85C | 30 | ✔ | ✔ | |||||
| Gate threshold voltage | VGS(th) | VDS=VGS, ID=250A | 2.0 | 3.0 | 4.0 | V | ✔ | ✔ |
| Gate leakage current | IGSS | VGS=+25V, VDS=0V | +100 | nA | ✔ | ✔ | ||
| Drain-source on-state resistance | RDS(on) | VGS=10V,IDS=35A | 9.5 | 11 | m | ✔ | ✔ | |
| VGS=10V,IDS=70A | 11 | m | ✔ | |||||
| Gate resistance | Rg | VDS=0V, VGS=0V,f=1MHz | 1.5 | ✔ | ✔ | |||
| Diode forward voltage | VSD | ISD=20A, VGS=0V | 0.8 | 1.3 | V | ✔ | ✔ | |
| Reverse recovery time | trr | ISD=35A , dlSD/dt=100A/s | 44 | nS | ✔ | ✔ | ||
| Reverse recovery charge | Qrr | 60 | nC | ✔ | ✔ | |||
| Input capacitance | Ciss | VDS=30V,VGS=0V, f=1MHz | 2900 | pF | ✔ | ✔ | ||
| Output capacitance | Coss | 290 | ✔ | ✔ | ||||
| Reverse transfer capacitance | Crss | 175 | ✔ | ✔ | ||||
| Turn-on delay time | td(on) | VDD=30V,IDS=1A, RL=30,VGEN=-10V RG=6 | 14 | ns | ✔ | ✔ | ||
| Rise time | tr | 11 | ✔ | ✔ | ||||
| Turn-off delay time | td(off) | 51 | ✔ | ✔ | ||||
| Fall time | tf | 22 | ✔ | ✔ | ||||
| Total gate charge | Qg | VDS=30V,VGS=10V IDS=35A | 55 | nC | ✔ | ✔ | ||
| Gate-source charge | Qgs | 12 | ✔ | ✔ | ||||
| Gate-drain charge | Qg d | 16 | ✔ | ✔ |
2410010000_KIA-Semicon-Tech-KND3508A_C116513.pdf
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