75A 100V N Channel MOSFET KIA Semicon Tech KIA3510AD suitable for inverter and power control systems
Key Attributes
Model Number:
KIA3510AD
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
-
Operating Temperature -:
-
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
179pF
Number:
1 N-channel
Input Capacitance(Ciss):
2.946nF
Output Capacitance(Coss):
339pF
Pd - Power Dissipation:
166W
Gate Charge(Qg):
60nC@10V
Mfr. Part #:
KIA3510AD
Package:
TO-252-2(DPAK)
Product Description
75A, 100V N-CHANNEL MOSFET - KIA SEMICONDUCTORS 3510A
This N-Channel MOSFET from KIA SEMICONDUCTORS, model 3510A, is designed for high-performance switching applications. It offers a low on-resistance and is 100% avalanche tested, ensuring reliability and ruggedness. This device is suitable for power management in inverter systems and is available as a lead-free and green device, complying with RoHS standards.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Model: 3510A
- Channel Type: N-CHANNEL
- Voltage Rating: 100V
- Current Rating: 75A
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | TO-220/263 | TO-252 | Units | Conditions | |
| Drain-source breakdown voltage | BVDSS | 100 | - | V | VGS=0V, IDS=250a | |
| Gate-source voltage | VGSS | ±25 | - | V | ||
| Maximum junction temperature | TJ | 175 | - | ºC | ||
| Storage temperature range | TSTG | -55 to175 | - | ºC | ||
| Continuous drain current | ID | 75 | 65 | A | TC=25ºC | |
| 51 | 44 | A | TC=100ºC | |||
| Pulsed drain current | IDP | 219 | - | A | TC=25ºC | |
| Avalanche current | IAS | 30 | - | A | Starting TJ=25ºC, L=0.5mH | |
| Avalanche energy | EAS | 225 | - | mJ | Starting TJ=25ºC, L=0.5mH | |
| Maximum power dissipation | PD | 166 | - | W | TC=25 ºC | |
| 83 | - | W | TC=100ºC | |||
| Thermal resistance,Junction-ambient | RθJA | 62.5 | - | ºC/W | ||
| Thermal resistance,Junction-case | RθJC | 0.9 | - | ºC/W | ||
| Zero gate voltage drain current | IDSS | - | 1 | µA | VDS=80V, VGS=0V, TJ=125ºC | |
| Gate threshold voltage | VGS(th) | 2.0 | 3.0 | 4.0 | V | VDS=VGS, ID=250µA |
| Gate leakage current | IGSS | - | ±100 | nA | VGS=±25V, VDS=0V | |
| Drain-source on-state resistance | RDS(on) | 9 | 11 | mΩ | VGS=10V, IDS=50A (TO-220/TO-263) | |
| 9 | 14 | mΩ | VGS=10V, IDS=50A (TO-252) | |||
| Gate resistance | Rg | - | 1.2 | Ω | VDS=0V, VGS=0V,f=1MHz | |
| Diode forward voltage | VSD | - | 1.3 | V | ISD=50A, VGS=0V | |
| Reverse recovery time | trr | - | 46 | nS | ISD=50A , dlSD/dt=100A/µs | |
| Reverse recovery charge | Qrr | - | 86 | nC | ISD=50A , dlSD/dt=100A/µs | |
| Input capacitance | Ciss | - | 2946 | pF | VDS=25V,VGS=0V, f=1MHz | |
| Output capacitance | Coss | - | 339 | - | VDS=25V,VGS=0V, f=1MHz | |
| Reverse transfer capacitance | Crss | - | 179 | - | VDS=25V,VGS=0V, f=1MHz | |
| Turn-on delay time | td(on) | - | 15 | ns | VDD=50V,IDS=30A, RG=6.8Ω,VGS=10V | |
| Rise time | tr | - | 108 | - | VDD=50V,IDS=30A, RG=6.8Ω,VGS=10V | |
| Turn-off delay time | td(off) | - | 51 | - | VDD=50V,IDS=30A, RG=6.8Ω,VGS=10V | |
| Fall time | tf | - | 59 | - | VDD=50V,IDS=30A, RG=6.8Ω,VGS=10V | |
| Total gate charge | Qg | - | 60 | nC | VDS=50V,VGS=10V IDS=30A | |
| Gate-source charge | Qgs | - | 13.7 | -- | VDS=50V,VGS=10V IDS=30A | |
| Gate-drain charge | Qgd | - | 22.8 | -- | VDS=50V,VGS=10V IDS=30A |
2410010000_KIA-Semicon-Tech-KIA3510AD_C116512.pdf
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