power management component KIA Semicon Tech KNC2404A 190A 40V N channel MOSFET for DC DC converters
Key Attributes
Model Number:
KNC2404A
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
190A
RDS(on):
2.2mΩ@10V,30A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
675pF@25V
Number:
1 N-channel
Pd - Power Dissipation:
123W
Input Capacitance(Ciss):
6.01nF@25V
Gate Charge(Qg):
150nC@10V
Mfr. Part #:
KNC2404A
Package:
TO-263-6L
Product Description
Product Overview
The KIA KNC2404A is a 190A, 40V N-CHANNEL MOSFET designed for power supply and DC-DC converter applications. It features low Rds(on) to minimize conductive loss and high avalanche current capability, making it a reliable component for efficient power management.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Model: KNC2404A
- Type: N-CHANNEL MOSFET
- Certifications: Lead free and green device available
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Drain-to-source breakdown voltage | BVDSS | VGS=0V,IDS=250A | 40 | - | - | V |
| Zero gate voltage drain current | IDSS | VDS=64V,VGS=0V | - | - | 1 | A |
| Gate threshold voltage | VGS(th) | VDS=VGS, IDS=250A | 2 | - | 4 | V |
| Gate leakage current | IGSS | VGS=+25V,VDS=0V | - | - | +100 | nA |
| Drain-source on-state resistance | RDS(on) | VGS=10V,IDS=30A | - | 2.2 | 3.5 | m |
| Forward Transconductance | Gfs | VDS=5V, ID=40A | - | 135 | - | S |
| Diode forward voltage | VSD | ISD=40A,VGS=0V | - | 0.9 | 1.3 | V |
| Diode continuous forward current | IS | - | - | - | 190 | A |
| Reverse recovery time | trr | IS=40A,dl/dt=100A/s | - | 55 | - | nS |
| Reverse recovery charge | Qrr | - | - | 70 | - | nC |
| Gate resistance | RG | VGS=0V, VDS=0V,F=1MHz | - | 2.0 | - | |
| Input capacitance | Ciss | VGS=0V, VDS=25V, F=1.0MHz | - | 6010 | - | pF |
| Output capacitance | Coss | - | - | 1400 | - | - |
| Reverse transfer capacitance | Crss | - | - | 675 | - | - |
| Turn-on delay time | td(ON) | VDD=25V,ID=90A, VGS=10V,RG=2.7 | - | 25 | - | nS |
| Turn-on rise time | tr | - | - | 102 | - | - |
| Turn-off delay time | td(OFF) | - | - | 62 | - | - |
| Turn-off fall time | tf | - | - | 84 | - | - |
| Total gate charge | Qg | VDS=40V, VGS=10V, ID=32A,F=1.0MHz | - | 150 | - | nC |
| Gate-to-source charge | Qgs | - | - | 32 | - | - |
| Gate-to-drain charge | Qgd | - | - | 70 | - | - |
| Drain-to-source voltage | VDSS | - | - | - | 40 | V |
| Gate-to-source voltage | VGSS | - | - | - | +25 | V |
| Continuous drain current | ID | TC=25C(Silicon limited) | - | - | 190 | A |
| Continuous drain current | ID | TC=25C(Package limited) | - | - | 120 | A |
| Continuous drain current | ID | TC=100C (Silicon limited) | - | - | 109 | A |
| Pulsed drain current | IDP | TC=25 C | - | - | 480 | A |
| Avalanche current(L=0.5mH) | IAS | - | - | - | 46 | A |
| Avalanche energy(L=0.5mH) | EAS | - | - | - | 529 | mJ |
| Maximum power dissipation | PD | TC=25 C | - | - | 123 | W |
| Maximum power dissipation | PD | TC=100 C | - | - | 82 | W |
| Junction & storage temperature range | TJ,TSTG | - | -55 | - | 150 | C |
| Thermal resistance-junction to case | Rjc | - | - | 1.02 | - | C/W |
| Thermal resistance-junction to ambient | Rja | - | - | 80 | - | - |
2409302301_KIA-Semicon-Tech-KNC2404A_C5156066.pdf
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