N channel MOSFET KIA Semicon Tech KIA2803AB 150A 30V with low on resistance and fast switching speed
Key Attributes
Model Number:
KIA2803AB
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
150A
Operating Temperature -:
-
RDS(on):
4mΩ@4.5V,40A
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
355pF
Number:
1 N-channel
Input Capacitance(Ciss):
4.05nF
Output Capacitance(Coss):
680pF
Pd - Power Dissipation:
160W
Gate Charge(Qg):
-
Mfr. Part #:
KIA2803AB
Package:
TO-263
Product Description
Product Overview
The KIA2803A is a 150A, 30V N-CHANNEL MOSFET designed using trench processing techniques for extremely low on-resistance. It features a 175C junction operating temperature, fast switching speed, and improved repetitive avalanche rating, making it an efficient and reliable device for motor applications and a wide variety of other uses.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Product Name: KIA2803A
- Type: N-CHANNEL MOSFET
- Certifications: Lead-Free, RoHS Compliant
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Units |
| Off Characteristics | BVDSS | VGS=0V,ID=250A | 30 | - | - | V |
| IDSS | VDS=24V ,VGS=0V | - | - | 1 | A | |
| TC=125 C | - | - | 100 | A | ||
| Gate-to-source leakage current | IGSS | VGS=20V,VDS=0V | - | - | 100 | nA |
| VGS=-20V,VDS=0V | - | - | -100 | nA | ||
| On characteristics | VGS(th) | VDS=VGS, ID=250A | 0.8 | 1.3 | 2.0 | V |
| RDS(on) | VGS=10V,ID=40A | - | 2.2 | 3.0 | m | |
| RDS(on) | VGS=4.5V,ID=40A | - | 2.8 | 4.0 | m | |
| Dynamic characteristics | Ciss | VDS=15V,VGS=0V,f=1.0MHz | - | 4050 | - | pF |
| Coss | - | 680 | - | |||
| Crss | - | 355 | - | |||
| Total gate charge | Qg | VDS=15V,ID=20A,VGS=4.5V | - | 110 | - | nC |
| Qgs | - | 35 | - | |||
| Qgd | - | 14 | - | |||
| Resistive switching characteristics | Td(ON) | VDD=15V,ID=10A,VGS=4.5V, RG=6.8 | - | 19 | - | nS |
| trise | - | 50 | - | |||
| Td(OFF) | - | 20 | - | |||
| tfall | - | 26 | - | |||
| Source-drain body diode characteristics | VSD | TJ=25C,VGS=0V,ISD=20A | - | - | 1.3 | V |
| trr | ISD=30A,diF/dt=100A/s, TJ=25C, VGS=0V | - | 32 | - | ns | |
| Qrr | - | 33 | - | nC |
2410010000_KIA-Semicon-Tech-KIA2803AB_C128800.pdf
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