Low gate charge N channel Trench MOSFET KIA Semicon Tech KND8103A with full function reliability approved
Key Attributes
Model Number:
KND8103A
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
30A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
15mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
65pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
572pF@15V
Pd - Power Dissipation:
25W
Gate Charge(Qg):
7.2nC@4.5V
Mfr. Part #:
KND8103A
Package:
TO-252
Product Description
Product Overview
The KIA-8103A is a high-performance N-channel Trench MOSFET with extreme high cell density, offering excellent RDS(on) and gate charge for synchronous buck converter applications. It meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approved. Key advantages include advanced high cell density Trench technology, super low gate charge, and excellent Cdv/dt effect decline. It is ideal for high-frequency point-of-load synchronous buck converters for MB/NB/UMPC/VGA, networking DC-DC power systems, and load switches.
Product Attributes
- Brand: KIA
- Certifications: RoHS, Green Product
Technical Specifications
| Parameter | Symbol | Rating | Units | Test Conditions |
| Drain-source voltage | VDS | 30 | V | |
| Gate-source voltage | VGS | +20 | V | |
| Continuous drain current, VGS @10V | ID | 30 | A | TC=25C |
| Continuous drain current, VGS @10V | ID | 18 | A | TC=100C |
| Pulsed drain current | IDM | 60 | A | |
| Single pulse avalanche energy | EAS | 72 | mJ | |
| Avalanche current | IAS | 21 | A | |
| Total power dissipation | PD | 25 | W | TC=25 C |
| Operation junction temperature range | TJ | -55 to150 | C | |
| Storage temperature range | TSTG | -55 to150 | C | |
| Drain-source breakdown voltage | BVDSS | 30 | V | VGS=0V,ID=250A |
| BVDSS temperature coefficient | BVDSS/TJ | 0.023 | V/C | Reference to 25 C, ID=1mA |
| Static drain-source on-resistance | RDS(on) | 15 | m | VGS=10V,ID=10A (typ.) |
| Static drain-source on-resistance | RDS(on) | 22 | m | VGS=4.5V,ID=5A (typ.) |
| Gate threshold voltage | VGS(th) | 1.0 | V | VDS=VGS, ID=250A (min.) |
| Gate threshold voltage | VGS(th) | 2.5 | V | VDS=VGS, ID=250A (max.) |
| Gate threshold voltage temperature coefficient | VGS(th) | -5.2 | mV/C | |
| Drain-source leakage current | IDSS | 1 | A | VDS=24V, VGS=0V TJ=25C (max.) |
| Drain-source leakage current | IDSS | 5 | A | VDS=24V, VGS=0V TJ=55C (max.) |
| Gate-source leakage current | IGSS | 100 | nA | VGS=+20V, VDS=0V (max.) |
| Forward transconductance | gfs | 10 | S | VDS=15V, ID=10A (typ.) |
| Gate resistance | Rg | 2.5 | VDS=24V, VGS=0V,f=1MHz (typ.) | |
| Total gate charge (4.5V) | Qg | 7.2 | nC | VDS=20V, VGS=4.5V ID =12A (typ.) |
| Gate-source charge | Qgs | 1.4 | nC | |
| Gate-drain charge | Qgd | 2.2 | nC | |
| Turn-on delay time | td(on) | 4.1 | ns | VDD=12V,ID=5A, RG=3.3, VGS=10V (typ.) |
| Rise time | tr | 9.8 | ns | VDD=12V,ID=5A, RG=3.3, VGS=10V (typ.) |
| Turn-off delay time | td(off) | 15.5 | ns | VDD=12V,ID=5A, RG=3.3, VGS=10V (typ.) |
| Fall time | tf | 6.0 | ns | VDD=12V,ID=5A, RG=3.3, VGS=10V (typ.) |
| Input capacitance | Ciss | 572 | pF | VDS=15V,VGS=0V, f=1MHz (typ.) |
| Output capacitance | Coss | 81 | pF | VDS=15V,VGS=0V, f=1MHz (typ.) |
| Reverse transfer capacitance | Crss | 65 | pF | VDS=15V,VGS=0V, f=1MHz (typ.) |
| Single pulse avalanche energy | EAS | 16 | mJ | VDD=25V,L=0.1mH, IAS=10A (typ.) |
| Continuous source current | IS | 30 | A | VG= VD==0V, Force current |
| Pulsed source current | ISM | 60 | A | |
| Diode forward voltage | VSD | 1.2 | V | VGS=0V,IS=15A, TJ=25C (typ.) |
2410010001_KIA-Semicon-Tech-KND8103A_C709687.pdf
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