N CHANNEL MOSFET KIA Semicon Tech KIA2302 with 3 Amp Continuous Drain Current and Thermal Resistance
Key Attributes
Model Number:
KIA2302
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-
RDS(on):
65mΩ@2.5V,2A
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
85pF
Number:
1 N-channel
Output Capacitance(Coss):
120pF
Input Capacitance(Ciss):
300pF
Pd - Power Dissipation:
1W
Gate Charge(Qg):
5.4nC@4.5V
Mfr. Part #:
KIA2302
Package:
SOT-23
Product Description
Product Overview
This N-CHANNEL MOSFET from KIA SEMICONDUCTORS, model 2302, is designed for applications requiring a 3.0A continuous drain current and a 20V drain-source voltage. It offers low on-resistance characteristics at various gate-source voltages and drain currents, making it suitable for power switching and amplification tasks.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Model: 2302
- Type: N-CHANNEL MOSFET
Technical Specifications
| Parameter | Symbol | Rating | Units | Test Conditions |
| Drain-source voltage | VDS | 20 | V | |
| Gate-source voltage | VGS | +8 | V | |
| Drain current continuous (TJ=150 C) TA=25C | ID | 3.0 | A | |
| Pulsed drain current | IDM | a | ||
| Continuous source current (diode conduction) | IS | 1.0 | A | |
| Power dissipation TA=25C | PD | 1.0 | W | |
| Junction and storage temperature range | TJ ,TSTG | -55 to150 | C | |
| Thermal Resistance from Junction to Ambient(t 5s) | RthJA | 156 | C/W | |
| Drain-source breakdown voltage | V(BR)DSS | 20 | V | VGS=0V,ID=250A |
| Gate threshold voltage | VGS(th) | 0.5 - 1.0 | V | VDS=VGS, ID=250A |
| Gate- body leakage | IGSS | - +100 | nA | VGS=+8V, VDS=0V |
| Zero gate voltage drain current | IDSS | - 1 | uA | VDS=16V, VGS=0V |
| Static drain-source on-resistance | RDS(on) | - 45 50 | m | VGS=4.5V,ID=3.0A |
| - 55 65 | VGS=2.5V,ID=2.0A | |||
| Forward transconductance | gfs | - 8 | S | VDS=5V, ID=-3.0A |
| Diode forward voltage | VSD | - - 1.3 | V | VGS=0V,IS=1.0A |
| Total gate charge | Qg | - 5.4 | nC | VDS=10V, VGS=4.5V ID=3.0A |
| Gate-source charge | Qgs | - 1.1 | ||
| Gate-drain charge | Qgd | - 0.7 | ||
| Input capacitance | Ciss | - 300 | pF | VDS=10V,VGS=0V, f=1MHz |
| Output capacitance | Coss | - 120 | pF | |
| Reverse transfer capacitance | Crss | - 85 | pF | |
| Switching times | td(on) | - 12 | ns | VDD=10V, ID =3.0A, RG=6, VGEN=4.5V |
| tr | - 84 | |||
| td(off) | - 43 | |||
| tf | - 18 |
2409302301_KIA-Semicon-Tech-KIA2302_C114184.pdf
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