Low On Resistance N CHANNEL MOSFET KIA Semicon Tech KNP3006A 120A 68V with Improved dv dt Capability
Key Attributes
Model Number:
KNP3006A
Product Custom Attributes
Drain To Source Voltage:
68V
Current - Continuous Drain(Id):
120A
RDS(on):
7mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
310pF
Number:
1 N-channel
Output Capacitance(Coss):
350pF
Pd - Power Dissipation:
266W
Input Capacitance(Ciss):
5.6nF
Gate Charge(Qg):
100nC@10V
Mfr. Part #:
KNP3006A
Package:
TO-220
Product Description
Product Overview
The KIA SEMICONDUCTORS KNP3006A is a 120A, 68V N-CHANNEL MOSFET designed for high-performance applications. It features low on-resistance (RDS(ON)=5.8m typ.), high ruggedness, low gate charge, 100% avalanche testing, and improved dv/dt capability. This MOSFET is ideal for synchronous rectification, Li battery protection boards, and inverters.
Product Attributes
- Brand: KIA
- Part Number: KNP3006A
- Package: TO-220
- Origin: KIA SEMICONDUCTORS
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
| Drain-source breakdown voltage | BVDSS | VGS=0V,ID=250uA | 68 | - | - | V |
| Breakdown voltage temperature coefficient | BVDSS /TJ | ID=250uA, referenced to 25C | - | 0.06 | - | V/C |
| Drain-source leakage current | IDSS | VDS=68V, VGS=0V | - | - | 1 | uA |
| VDS=54V, TJ=125C | - | - | 50 | uA | ||
| Gate-source forward leakage | IGSS | VGS=20V, VDS=0V | - | - | 100 | nA |
| Drain-source on-resistance | RDS(on) | VGS=10V,ID=30A | - | 5.8 | 7.0 | m |
| VGS=10V,ID=50A | - | 5.9 | 7.0 | m | ||
| VGS=10V,ID=30A, TJ=125C | - | 10.4 | - | m | ||
| Gate threshold voltage | VGS(TH) | VDS=VGS,ID=250uA | 2.0 | - | 4.0 | V |
| Forward Transconductance | gfs | VDS=10V,ID=30A | - | 46 | - | S |
| Input capacitance | Ciss | VDS=34V,VGS=0V f=1MHz | - | 5600 | - | pF |
| Output capacitance | Coss | - | 350 | - | pF | |
| Reverse transfer capacitance | Crss | - | 310 | - | pF | |
| Total gate charge | Qg | VDS=54V, ID=30A VGS=10V, IG=5mA 4),5) | - | 100 | - | nC |
| Gate-source charge | Qgs | - | 28 | - | nC | |
| Gate-drain charge | Qgd | - | 34 | - | nC | |
| Turn-on delay time | td(on) | VDS=34V,VGS=10V, RG=4.7, ID=30A 4),5) | - | 25 | - | ns |
| Rise time | tr | - | 65 | - | ns | |
| Turn-off delay time | td(off) | - | 74 | - | ns | |
| Fall time | tf | - | 30 | - | ns | |
| Gate resistance | RG | VDS=0V, Scan F mode | - | 3 | - | |
| Continuous Source Current | IS | - | - | 120 | A | |
| Pulsed Source Current | ISM | - | - | 480 | A | |
| Diode forward voltage | VSD | IS=30A,VGS=0V | - | - | 1.4 | V |
| Reverse Recovery Time | trr | VGS=0V,IS=30A, dIF/dt=100A/s | - | 33 | - | nS |
| Reverse Recovery Charge | Qrr | - | 41 | - | uC |
2411121110_KIA-Semicon-Tech-KNP3006A_C41369553.pdf
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