High current 240A 80V N CHANNEL MOSFET KIA Semicon Tech KCC1808A ideal for battery and motor control
Key Attributes
Model Number:
KCC1808A
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
200A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.7mΩ@10V,50A
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
949pF@40V
Number:
1 N-channel
Input Capacitance(Ciss):
13.621nF@40V
Pd - Power Dissipation:
223W
Mfr. Part #:
KCC1808A
Package:
TO-263-6L
Product Description
Product Overview
The KCC1808A is a 240A, 80V N-CHANNEL MOSFET from KIA SEMICONDUCTORS. It utilizes advanced SGT technology, offering extremely low RDS(on) with a typical value of 1.7m at VGS=10V and an excellent figure of merit (FOM). This MOSFET is ideal for motor control and drives, battery management, DC/DC converters, and general-purpose applications.
Product Attributes
- Brand: KIA
- Part Number: KCC1808A
- Package: TO-263-6
Technical Specifications
| Parameter | Symbol | Ratings | Unit | Test Condition |
| Drain-source breakdown voltage | V(BR)DSS | 80 | V | VGS=0V, ID=250uA |
| Gate threshold voltage | VGS(th ) | 2 - 4 | V | VDS=VGS,ID=250uA,Tj=25C |
| Zero gate voltage drain current | IDSS | - - 1 | A | VDS=80V,VGS=0V,Tj=25C |
| Zero gate voltage drain current | IDSS | - - 10 | A | VDS=64V,VGS=0V,Tj=125C |
| Gate-source leakage current | IGSS | - - 100 | nA | VGS=20V,VDS=0V |
| Drain-source on-state resistance | RDS(on) | - 1.7 2 | m | VGS=10V, ID=50A,Tj=25C |
| Transconductance | gfs | - 145 - | S | VDS=5V,ID=40A |
| Input Capacitance | Ciss | - 13621 - | pF | VGS=0V, VDS=40V, f=1MHz |
| Output Capacitance | Coss | - 2345 - | pF | |
| Reverse Transfer Capacitance | Crss | - 949 - | pF | |
| Gate Total Charge | QG | - 207 - | nC | VGS=10V, VDS=40V, ID=50A |
| Gate-Source charge | Qgs | - 56 - | ||
| Gate-Drain charge | Qgd | - 42 - | ||
| Turn-on delay time | td(on) | - 36 - | ns | Tj=25C, VGS=10V, VDS=40V, RL=3 |
| Rise time | tr | - 130 - | ns | |
| Turn-off delay time | td(off) | - 124 - | ns | |
| Fall time | tf | - 150 - | ns | |
| Gate resistance | RG | - 1.85 - | VGS=0V, VDS=0V, f=1MHz | |
| Body Diode Forward Voltage | VSD | - 0.85 1.2 | V | VGS=0V, ISD=50A |
| Body Diode Reverse Recovery Time | trr | - 112 - | ns | IF=30A, dI/dt=500A/s |
| Body Diode Reverse Recovery Charge | Qrr | - 213 - | nC | IF=30A, dI/dt=500A/s |
| Continuous Drain Current | ID | 270 | A | TC=25 C(Silicon limited) |
| Continuous Drain Current | ID | 200 | A | TC=25 C(Package limited) |
| Continuous Drain Current | ID | 170 | A | TC=100 C(Silicon limited) |
| Pulsed drain current | IDP | 750 | A | (TC = 25C, tp limited by Tjmax) |
| Avalanche energy, single pulse | EAS | 2500 | mJ | (L=0.5mH, Rg=25) |
| Gate-Source voltage | VGS | 20 | V | |
| Power dissipation | Ptot | 223 | W | |
| Junction & Storage Temperature Range | TJ& TSTG | -55 to 150 | C | |
| Thermal resistance, Junction-case | RJC | 0.54 | C/W | |
| Thermal resistance, junction-ambient | RJA | 60 | C/W |
2411121145_KIA-Semicon-Tech-KCC1808A_C7465111.pdf
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