Silicon Carbide MOSFET KNSCHA KN3M50120K with high voltage and low gate leakage current specifications
Key Attributes
Model Number:
KN3M50120K
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
58A
Operating Temperature -:
-55℃~+175℃
RDS(on):
50mΩ
Reverse Transfer Capacitance (Crss@Vds):
5.2pF
Output Capacitance(Coss):
106pF
Input Capacitance(Ciss):
2.75nF
Pd - Power Dissipation:
344W
Gate Charge(Qg):
120nC
Mfr. Part #:
KN3M50120K
Package:
TO-247-4
Product Description
Product Overview
This product family of Silicon Carbide (SiC) MOSFETs offers state-of-the-art performance designed for high-frequency applications requiring high efficiency and reliability. Key features include high voltage, low on-resistance, high speed, low parasitic capacitance, high junction temperature, a fast recovery diode, and Kelvin connection for the driver. It is ideal for demanding applications such as motor drives, photovoltaic inverters, UPS power supplies, high-voltage DC/DC converters, and switching mode power supplies.
Product Attributes
- Brand: KNSCHA
- Material: Silicon Carbide (SiC) MOSFET
- Package: TO-247-4
Technical Specifications
| Type | VDS (V) | ID (A) TC=25 | RDS(ON) (m) TC=25 | VGS (V) | PTOT (W) TC=25 | Tj (C) | RthJC (C/W) |
| KN3M0050120K | 1200 | 58 | 50 | -5 to 20 | 344 | -55 to +175 | 0.436 |
| Parameter | Symbol | Value | Unit | Test Condition |
| Zero gate voltage drain current | IDSS | 5 | A | VDS = 1200V, VGS = 0V |
| Gate leakage current | IGSS | 100 | nA | VDS = 0V, VGS = -5~20V |
| Gate threshold voltage | VTH | 2.2 | V | VGS = VDS, ID = 6mA |
| Drain-source on-state resistance | RON | 50 | m | VGS = 20V, ID = 20A, TJ = 25 |
| Drain-source on-state resistance | RON | 65 | m | VGS = 20V, ID = 20A, TJ = 175 |
| Input capacitance | Ciss | 2750 | pF | VDS = 800V, VGS = 0V, f = 1MHZ, VAC = 25mV |
| Output capacitance | Coss | 106 | pF | VDS = 800V, VGS = 0V, f = 1MHZ, VAC = 25mV |
| Reverse transfer capacitance | Crss | 5.2 | pF | VDS = 800V, VGS = 0V, f = 1MHZ, VAC = 25mV |
| The output capacitor stores energy | Eoss | 43 | J | VDS = 800V, VGS = 0V, f = 1MHZ, VAC = 25mV |
| Total gate charge | Qg | 120 | nC | VDS = 800V, ID = 20A, VGS = -5 to 20V |
| Gate to source charge | Qgs | 25 | nC | VDS = 800V, ID = 20A, VGS = -5 to 20V |
| Gate to drain charge | Qgd | 48 | nC | VDS = 800V, ID = 20A, VGS = -5 to 20V |
| Gate input resistance | Rg | 2.8 | f =1MHZ | |
| Turn-on switching energy | EON | 455.4 | J | VDS = 800V, ID = 30A, VGS = -2 to 20V, RG(ext) =3.3, L = 450H |
| Turn-off switching energy | EOFF | 213.6 | J | VDS = 800V, ID = 30A, VGS = -2 to 20V, RG(ext) =3.3, L = 450H |
| Turn-on delay time | td(on) | 8.9 | ns | VDS = 800V, ID = 30A, VGS = -2 to 20V, RG(ext) =3.3, L = 450H |
| Rise time | tr | 28.9 | ns | VDS = 800V, ID = 30A, VGS = -2 to 20V, RG(ext) =3.3, L = 450H |
| Turn-off delay time | td(off) | 25.6 | ns | VDS = 800V, ID = 30A, VGS = -2 to 20V, RG(ext) =3.3, L = 450H |
| Fall time | tf | 17.2 | ns | VDS = 800V, ID = 30A, VGS = -2 to 20V, RG(ext) =3.3, L = 450H |
| Diode forward voltage | VSD | 4.4 | V | ISD = 20A, VGS = 0V, TJ = 175C |
| Reverse recovery time | trr | 44.4 | ns | VGS= -2V/+20V, ISD = 30A, VR = 800V, di/dt = 1000A/us, RG(ext ) =10, L = 450H |
| Reverse recovery charge | Qrr | 212.6 | nC | VGS= -2V/+20V, ISD = 30A, VR = 800V, di/dt = 1000A/us, RG(ext ) =10, L = 450H |
| Reverse recovery peak current | IRRM | 10.8 | A | VGS= -2V/+20V, ISD = 30A, VR = 800V, di/dt = 1000A/us, RG(ext ) =10, L = 450H |
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
2410122008_KNSCHA-KN3M50120K_C5373189.pdf
Related Products
Glass passivated chip diode YONGYUTAI MB8S offering performance in power supply and rectification circuits
Product OverviewThis series of glass passivated chip junction diodes offers a wide range of reverse voltage capabilities from 100V to 1000V, with a forward current of 0.8A and high surge current capability. Designed for surface mount applications, these diodes are suitable for various power supply ...
Planar Die Zener Diode XZT BZT52C5V6S for Medium Current Applications Lead Free Version
XT ELECTRONICS BZT52C2V4S thru BZT52C43S ZENER DIODEThe XT ELECTRONICS BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose and medium current applications. They are ideally suited for automated assembly processes and are available in lead-free ...
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
Surface Mount Schottky Bridge Rectifier YONGYUTAI MB14F with 40 Volt Reverse Voltage and 1 Amp Forward Current
Product OverviewThis MBF package Surface Mount Schottky Bridge rectifier offers a reverse voltage range of 40 to 200V and a forward current of 1A. It features high surge current capability and is designed for surface mount applications. Ideal for single-phase half-wave 60 Hz rectification with ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
