Trench MOS Barrier Schottky Diode JUXING MK4045TS Designed for On Board DC DC Converters and Adaptors
Product Overview
The Schottky Bypass Diode Module MK4045TS features Trench MOS Barrier Schottky technology for majority carrier conduction, resulting in ultra-low forward voltage drop and low leakage current. This design minimizes power loss and ensures high efficiency, making it ideal for high-frequency switched mode power supplies, adaptors, and on-board DC/DC converters. It offers high forward surge capacity and operates over a wide temperature range.
Product Attributes
- Brand: trr-jx
- Model: MK4045TS
- Technology: Trench MOS Barrier Schottky
- Conduction Type: Majority Carrier
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
| Maximum repetitive peak reverse voltage | VRRM | 45 | V | |
| Maximum RMS voltage | VRMS | 32 | V | |
| Max. DC blocking voltage | VDC | 45 | V | |
| Operating junction temperature rangeAC model | Top | -55~150 | ||
| Junction temperature in DC forward current without reverse bias,t1h | TJ | -55~200 | ||
| Maximum average forward current (50% duty cycle, rectangular waveform) | IF(AV) | 40 | A | Tc=25 |
| Surge non repetitive forward current (8.3 ms single sine-wave superimposed on rated load per diode) | IFSM | 420 | A | |
| Maximum DC Reverse Current at Rated DC Bolcking Voltage @TJ=25 | IR | 50 | uA | |
| Maximum DC Reverse Current at Rated DC Bolcking Voltage @TJ=125 | IR | 50 | mA | |
| Maximum thermal resistance per dioxide | RJC | 1.0 | C/W |
2411272142_JUXING-MK4045TS_C19078585.pdf
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