KEXIN KO6401 HF P Channel MOSFET Offering Power Handling and Low Gate Threshold Voltage Performance
Key Attributes
Model Number:
KO6401-HF
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
47mΩ@10V,5A
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
80pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
780pF@15V
Pd - Power Dissipation:
1.3W
Gate Charge(Qg):
17nC@10V
Mfr. Part #:
KO6401-HF
Package:
SOT-23-6
Product Description
Product Overview
This P-Channel MOSFET, AO6401-HF (KO6401-HF), is designed for surface-mount applications. It features a drain-source voltage of -30V and continuous drain current capabilities up to -5A. With low on-resistance values at various gate-source voltages, it offers efficient power handling. The SOT-23-6 package is suitable for compact designs.
Product Attributes
- Brand: Kexin
- SMD Type: SOT-23-6
- PbFree Package: May be Available (GSuffix Denotes PbFree Lead Finish)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | VDSS | ID=-250A, VGS=0V | -30 | V | ||
| Gate-Body leakage current | IGSS | VDS=0V, VGS=12V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=-250A | -0.5 | -1.3 | V | |
| Static Drain-Source On-Resistance | RDS(On) | VGS=-10V, ID=-5A | 47 | m | ||
| VGS=-10V, ID=-5A, TJ=125 | 74 | m | ||||
| VGS=-4.5V, ID=-4A | 64 | m | ||||
| VGS=-2.5V, ID=-1A | 85 | m | ||||
| On state drain current | ID(ON) | VGS=-10V, VDS=-5V | -28 | A | ||
| Forward Transconductance | gFS | VDS=-5V, ID=-5A | 18 | S | ||
| Input Capacitance | Ciss | VGS=0V, VDS=0V, f=1MHz | 645 | 780 | pF | |
| Output Capacitance | Coss | VGS=0V, VDS=0V, f=1MHz | 80 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=0V, f=1MHz | 55 | 80 | pF | |
| Gate resistance | Rg | VGS=0V, VDS=0V, f=1MHz | 4 | 12 | ||
| Total Gate Charge | Qg | VGS=-10V, VDS=-15V, ID=-5A | 14 | 17 | nC | |
| Total Gate Charge | Qg | VGS=-4.5V, VDS=-15V, ID=-4A | 7 | 8.5 | nC | |
| Gate Source Charge | Qgs | VGS=-10V, VDS=-15V, ID=-5A | 1.5 | nC | ||
| Gate Drain Charge | Qgd | VGS=-10V, VDS=-15V, ID=-5A | 2.5 | nC | ||
| Turn-On DelayTime | td(on) | VGS=-10V, VDS=-15V, RL=3, RGEN=3 | 6.5 | ns | ||
| Turn-On Rise Time | tr | VGS=-10V, VDS=-15V, RL=3, RGEN=3 | 3.5 | ns | ||
| Turn-Off DelayTime | td(off) | VGS=-10V, VDS=-15V, RL=3, RGEN=3 | 41 | ns | ||
| Turn-Off Fall Time | tf | VGS=-10V, VDS=-15V, RL=3, RGEN=3 | 9 | ns | ||
| Body Diode Reverse Recovery Time | trr | IF=-5A, dI/dt=100A/s | 11 | 13.5 | ns | |
| Body Diode Reverse Recovery Charge | Qrr | IF=-5A, dI/dt=100A/s | 3.5 | nC | ||
| Maximum Body-Diode Continuous Current | IS | -2.5 | A | |||
| Diode Forward Voltage | VSD | IS=-1A,VGS=0V | -1 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-30V, VGS=0V | -1 | A | ||
| VDS=-30V, VGS=0V, TJ=55 | -5 | A | ||||
| Continuous Drain Current | ID | TA=25C, VGS=-10V | -5 | A | ||
| TA=70C, VGS=-10V | -4 | A | ||||
| Pulsed Drain Current | IDM | t 10s | -28 | A | ||
| Power Dissipation | PD | TA=25C | 2 | W | ||
| TA=70C | 1.3 | W | ||||
| Thermal Resistance.Junction- to-Lead | RthJL | Steady-State | 50 | /W | ||
| Thermal Resistance.Junction- to-Ambient | RthJA | Steady-State | 110 | /W | ||
| Junction Temperature | TJ | 150 | ||||
| Junction Storage Temperature Range | Tstg | -55 | 150 | |||
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | 12 | V |
2410121944_KEXIN-KO6401-HF_C489386.pdf
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