P Channel MOSFET KEXIN KO3415 Featuring Low On Resistance And High Reliability For Electronic Devices
Key Attributes
Model Number:
KO3415
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
43mΩ@4.5V,5A
Gate Threshold Voltage (Vgs(th)):
300mV
Reverse Transfer Capacitance (Crss@Vds):
115pF@10V
Number:
1 P-Channel
Input Capacitance(Ciss):
905pF@10V
Pd - Power Dissipation:
1W
Gate Charge(Qg):
7.4nC@4.5V
Mfr. Part #:
KO3415
Package:
SOT-23
Product Description
Product Overview
The AO3415 (KO3415) is a P-Channel MOSFET designed for various applications. It features a low on-resistance (RDS(ON)) across different gate-source voltages and a continuous drain current of -5A.
Product Attributes
- Brand: Kexin (implied by www.kexin.com.cn)
- SMD Type: SOT-23-3
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | VDSS | ID=-250A, VGS=0V | -20 | V | ||
| VDS=-20V, VGS=0V | -1 | V | ||||
| VDS=-20V, VGS=0V, TJ=55 | -5 | V | ||||
| Gate-Body leakage current | IGSS | VDS=0V, VGS=8V | 0.1 | uA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS ID=-250A | -0.3 | -0.9 | V | |
| On state drain current | ID(ON) | VGS=-4.5V, VDS=-5V | -30 | A | ||
| VGS=-4.5V, ID=-4A | 43 | m | ||||
| TJ=125 | 59 | m | ||||
| VGS=-2.5V, ID=-4A | 55 | m | ||||
| VGS=-1.8V, ID=-2A | 75 | m | ||||
| VGS=-1.5V, ID=-1A | 100 | m | ||||
| Forward Transconductance | gFS | VDS=-5V, ID=-4 A | 20 | S | ||
| Input Capacitance | Ciss | VGS=0V, VDS=0V, f=1MHz | 600 | 905 | pF | |
| Output Capacitance | Coss | VGS=0V, VDS=-10V, f=1MHz | 80 | 150 | pF | |
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=-10V, f=1MHz | 48 | 115 | pF | |
| Gate resistance | Rg | VGS=0V, VDS=0V, f=1MHz | 6 | 20 | ||
| Total Gate Charge | Qg | VGS=-4.5V, VDS=-10V, ID=-4A | 7.4 | 11 | nC | |
| Gate Source Charge | Qgs | VGS=-4.5V, VDS=-10V, ID=-4A | 0.8 | 1.2 | nC | |
| Gate Drain Charge | Qg | VGS=-4.5V, VDS=-10V, ID=-4A | 1.3 | 3.1 | nC | |
| Turn-On DelayTime | td(on) | VGS=-4.5V, VDS=-10V, RL=2.5, RGEN=3 | 13 | ns | ||
| Turn-On Rise Time | tr | VGS=-4.5V, VDS=-10V, RL=2.5, RGEN=3 | 9 | ns | ||
| Turn-Off DelayTime | td(off) | VGS=-4.5V, VDS=-10V, RL=2.5, RGEN=3 | 19 | ns | ||
| Turn-Off Fall Time | tf | VGS=-4.5V, VDS=-10V, RL=2.5, RGEN=3 | 29 | ns | ||
| Body Diode Reverse Recovery Time | trr | IF=-4A, dI/dt=100A/s | 20 | 32 | ns | |
| Body Diode Reverse Recovery Charge | Qrr | IF=-4A, dI/dt=100A/s | 40 | 62 | nC | |
| Maximum Body-Diode Continuous Current | IS | -2 | A | |||
| Diode Forward Voltage | VSD | IS=-1A,VGS=0V | -1 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-20V, VGS=0V | -1 | uA | ||
| Continuous Drain Current | ID | TA=25C | -5 | A | ||
| TA=70C | -4 | A | ||||
| Pulsed Drain Current | IDM | -30 | A | |||
| Power Dissipation | PD | TA=25C | 1.5 | W | ||
| TA=70C | 1 | W | ||||
| Thermal Resistance.Junction- to-Ambient | RthJA | t 10s | 80 | /W | ||
| Steady-State | 100 | /W | ||||
| Thermal Resistance.Junction- to-Lead | RthJL | 52 | /W | |||
| Junction Temperature | TJ | 150 | ||||
| Junction Storage Temperature Range | Tstg | -55 | 150 |
2410010132_KEXIN-KO3415_C489377.pdf
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