Planar Die Zener Diode SOT23 Package JUXING BZX84C6V2 300mW Power Dissipation Voltage Regulation Device
Key Attributes
Model Number:
BZX84C6V2
Product Custom Attributes
Impedance(Zzt):
10Ω
Pd - Power Dissipation:
300mW
Zener Voltage(Range):
5.8V~6.6V
Zener Voltage(Nom):
6.2V
Impedance(Zzk):
150Ω
Mfr. Part #:
BZX84C6V2
Package:
SOT-23
Product Description
Product Overview
The BZX84C2V4-BZX84C43 series are planar die construction Zener diodes in an ultra-small SOT-23 surface mount package. They offer 300mW power dissipation and Zener voltages ranging from 2.4V to 43V, making them suitable for various voltage regulation applications.
Product Attributes
- Brand: trr-jx.com
- Package Type: SOT-23
- Construction: Planar Die
Technical Specifications
| Type Number | Code | Nominal Zener Voltage (V) | Minimum Zener Voltage (V) | Maximum Zener Voltage (V) | Test Current (mA) | Maximum Zener Impedance () | Maximum Reverse Current (A) | Temperature Coefficient (mV/C) |
| BZX84C2V4 | Z11 | 2.4 | 2.20 | 2.60 | 5 | 100 | 1.0 | -3.5 to 0 |
| BZX84C2V7 | Z12 | 2.7 | 2.5 | 2.9 | 5 | 100 | 1.0 | -3.5 to 0 |
| BZX84C3V0 | Z13 | 3.0 | 2.8 | 3.2 | 5 | 95 | 1.0 | -3.5 to 0 |
| BZX84C3V3 | Z14 | 3.3 | 3.1 | 3.5 | 5 | 95 | 1.0 | -3.5 to 0 |
| BZX84C3V6 | Z15 | 3.6 | 3.4 | 3.8 | 5 | 90 | 1.0 | -3.5 to 0 |
| BZX84C3V9 | Z16 | 3.9 | 3.7 | 4.1 | 5 | 90 | 1.0 | -3.5 to 0 |
| BZX84C4V3 | Z17 | 4.3 | 4.0 | 4.6 | 5 | 90 | 1.0 | -3.5 to 0 |
| BZX84C4V7 | Z1 | 4.7 | 4.4 | 5.0 | 5 | 80 | 1.0 | -3.5 to 0.2 |
| BZX84C5V1 | Z2 | 5.1 | 4.8 | 5.4 | 5 | 60 | 1.0 | -2.7 to 1.2 |
| BZX84C5V6 | Z3 | 5.6 | 5.2 | 6.0 | 5 | 40 | 1.0 | -2.0 to 2.5 |
| BZX84C6V2 | Z4 | 6.2 | 5.8 | 6.6 | 5 | 10 | 1.0 | 0.4 to 3.7 |
| BZX84C6V8 | Z5 | 6.8 | 6.4 | 7.2 | 5 | 15 | 1.0 | 1.2 to 4.5 |
| BZX84C7V5 | Z6 | 7.5 | 7.0 | 7.9 | 5 | 15 | 1.0 | 2.5 to 5.3 |
| BZX84C8V2 | Z7 | 8.2 | 7.7 | 8.7 | 5 | 15 | 1.0 | 3.2 to 6.2 |
| BZX84C9V1 | Z8 | 9.1 | 8.5 | 9.6 | 5 | 15 | 1.0 | 3.8 to 7.0 |
| BZX84C10 | Z9 | 10 | 9.4 | 10.6 | 5 | 20 | 1.0 | 4.5 to 8.0 |
| BZX84C11 | Y1 | 11 | 10.4 | 11.6 | 5 | 20 | 1.0 | 5.4 to 9.0 |
| BZX84C12 | Y2 | 12 | 11.4 | 12.7 | 5 | 25 | 1.0 | 6.0 to 10.0 |
| BZX84C13 | Y3 | 13 | 12.4 | 14.1 | 5 | 30 | 1.0 | 7.0 to 11.0 |
| BZX84C15 | Y4 | 15 | 13.8 | 15.6 | 5 | 30 | 1.0 | 9.2 to 13.0 |
| BZX84C16 | Y5 | 16 | 15.3 | 17.1 | 5 | 40 | 1.0 | 10.4 to 14.0 |
| BZX84C18 | Y6 | 18 | 16.8 | 19.1 | 5 | 45 | 1.0 | 12.4 to 16.0 |
| BZX84C20 | Y7 | 20 | 18.8 | 21.2 | 5 | 55 | 1.0 | 14.4 to 18.0 |
| BZX84C22 | Y8 | 22 | 20.8 | 23.3 | 5 | 55 | 1.0 | 16.4 to 20.0 |
| BZX84C24 | Y9 | 24 | 22.8 | 25.6 | 5 | 70 | 1.0 | 18.4 to 22.0 |
| BZX84C27 | Y10 | 27 | 25.1 | 28.9 | 2 | 80 | 0.5 | 21.4 to 25.3 |
| BZX84C30 | Y11 | 30 | 28.0 | 32.0 | 2 | 80 | 0.5 | 24.4 to 29.4 |
| BZX84C33 | Y12 | 33 | 31.0 | 35.0 | 2 | 80 | 0.5 | 27.4 to 33.4 |
| BZX84C36 | Y13 | 36 | 34.0 | 38.0 | 2 | 90 | 0.5 | 30.4 to 37.4 |
| BZX84C39 | Y14 | 39 | 37.0 | 41.0 | 2 | 130 | 0.5 | 33.4 to 41.2 |
| BZX84C43 | Y15 | 43 | 40.0 | 46.0 | 2 | 100 | 1.0 | 10 to 12 |
Maximum Ratings
| Characteristic | Symbol | Value | Unit |
| Forward Voltage (Note 2) @ IF = 10mA | VF | 0.9 | V |
| Power Dissipation (Note 1) | Pd | 300 | mW |
| Thermal Resistance from Junction to Ambient | RJA | 417 | /W |
| Junction Temperature | Tj | 150 | |
| Storage Temperature Range | Tstg | -55~+150 |
2410121247_JUXING-BZX84C6V2_C41368121.pdf
Related Products
Planar Die Zener Diode XZT BZT52C5V6S for Medium Current Applications Lead Free Version
XT ELECTRONICS BZT52C2V4S thru BZT52C43S ZENER DIODEThe XT ELECTRONICS BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose and medium current applications. They are ideally suited for automated assembly processes and are available in lead-free ...
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
High speed switching transistor YANGJIE DGP15N65CTL designed for hard and soft switching applications
Product OverviewThe DGP15N65CTL0 is a high-speed smooth switching IGBT discrete device designed for hard and soft switching applications. It features a maximum junction temperature of 175, a positive temperature coefficient, and high ruggedness with temperature stability. This IGBT is suitable for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
