P Channel TrenchFET Power MOSFET KUU SI2309 for Load Switching and DC DC Converters Applications
Key Attributes
Model Number:
SI2309
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
165mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
20pF@30V
Number:
1 P-Channel
Input Capacitance(Ciss):
210pF@30V
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
12nC@10V
Mfr. Part #:
SI2309
Package:
SOT-23
Product Description
Product Overview
The SI2309 is a P-Channel TrenchFET Power MOSFET designed for load switching in portable devices and DC/DC converters. Its key features include low on-resistance and efficient power dissipation, making it suitable for various power management applications.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID =-250A | -60 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS =VGS, ID =-250A | -1 | -1.9 | -3 | V |
| Gate-Source Leakage Current | IGSS | VDS =0V, VGS =20 V | 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS =-48V, VGS = 0V | -1 | A | ||
| Zero Gate Voltage Drain Current | IDSS | VDS =-48V, VGS = 0V | -50 | A | ||
| On-state Drain Current | ID(ON) | VGS =-10V, VDS -4.5V | -6 | A | ||
| Drain-Source On-Resistance | RDS(on) | VGS =-10V, ID = -2A | 158 | 165 | m | |
| Forward Transconductance | gFS | VDS =-4.5V, ID =-1A | 1.9 | S | ||
| Input Capacitance | Ciss | VDS = -30V,VGS =0V, f=1MHz | 210 | pF | ||
| Output Capacitance | Coss | 28 | pF | |||
| Reverse Transfer Capacitance | Crss | 20 | pF | |||
| Total Gate Charge | Qg | VDS =-30V, VGS =-10V, ID =-1.25 A | 5.4 | 12 | nC | |
| Gate-Source Charge | Qgs | 1.15 | nC | |||
| Gate-Drain Charge | Qg d | 0.92 | nC | |||
| Turn-on Delay Time | td(on) | VDD=-30V, RL=6, ID=-1A VGEN=-4.5V, RG=6 | 10.5 | 20 | nS | |
| Rise Time | tr | 11.5 | 20 | nS | ||
| Turn-off Delay Time | td(off) | 15.5 | 30 | nS | ||
| Fall Time | tf | 7.5 | 15 | nS | ||
| Continuous Current | IS | -1.25 | A | |||
| Pulsed Current | ISM | -8 | A | |||
| Diode Forward Voltage | VSD | Is=-1.25A, VGS=0V | -0.82 | -1.25 | V | |
| Source-Drain Reverse Recovery Time | trr | IF=-1.25A Di/Dt=100A/s | 30 | 55 | ns |
2410010332_KUU-SI2309_C20199353.pdf
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