P channel MOSFET KIA Semicon Tech KIA35P10AD designed for voltage up to 100 volts and current 35 amps
Key Attributes
Model Number:
KIA35P10AD
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
35A
Operating Temperature -:
-
RDS(on):
42mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
125pF
Number:
-
Output Capacitance(Coss):
223pF
Input Capacitance(Ciss):
4.92nF
Pd - Power Dissipation:
104W
Gate Charge(Qg):
92nC@10V
Mfr. Part #:
KIA35P10AD
Package:
TO-252
Product Description
Product Overview
The KIA35P10A is a P-CHANNEL MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of applications. This device meets RoHS and Green product requirements, with 100% EAS guaranteed and full functional reliability approved.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Product Name: 35P10A
- Channel Type: P-CHANNEL
- Voltage Rating: -100V
- Current Rating: -35A
- Certifications: RoHS, Green device available
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| Drain-Source breakdown voltage | BVDSS | VGS=0V, ID=-250A | -100 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=-100V,VGS=0V, TJ=25C | - | - | -50 | A |
| Gate-source leakage current | IGSS | VGS=+20V,VDS=0V | - | - | +100 | nA |
| Gate threshold voltage | VGS(th) | VDS=VGS, ID=250A | -1.2 | -1.8 | -2.5 | V |
| Static drain-source on- resistance | RDS(on) | VGS=-10V,ID=-10A | - | 42 | 55 | m |
| Static drain-source on- resistance | RDS(on) | VGS=-4.5V,ID=-8A | - | 46 | 60 | m |
| Forward transcend ductance | gFS | VDS=-10V, ID=-10A | - | 32 | - | S |
| Total gate charge | Qg | VDS=-80V, VGS=-10V ID =-14A | - | 92 | - | nC |
| Gate-source charge | Qgs | - | 17.5 | - | ||
| Gate-drain charge | Qg d | - | 14 | - | ||
| Turn-on delay time | td(on) | VDD=-50V, RG=3.3, VGS=-10V ID=-14A | - | 20.5 | - | ns |
| Rise time | tr | - | 32.2 | - | ||
| Turn-off delay time | td(off) | - | 123 | - | ||
| Fall time | tf | - | 63.7 | - | ||
| Input capacitance | Ciss | VGS=0V, VDS=-25V F=1.0MHZ | - | 4920 | - | pF |
| Output capacitance | Coss | - | 223 | - | ||
| Reverse transfer capacitance | Crss | - | 125 | - | ||
| Continuous source current | IS | VG=VD=0V,Force current | - | - | -35 | A |
| Diode forward voltage | VSD | VGS=0V,IS=-1A, TJ=25C | - | - | 1.2 | V |
| Reverse recovery time | trr | IF=-14A,dl/dt=100A/us , TJ=25C | - | 31.2 | - | nS |
| Reverse recovery charge | Qrr | - | 31.97 | - | nC |
Absolute Maximum Ratings
| Parameter | Symbol | Rating | Units |
|---|---|---|---|
| Drain-source voltage | VDS | -100 | V |
| Gate-source voltage | VGS | +20 | V |
| Continuous drain current VGS@-10V TC=25C | ID | -35 | A |
| Continuous drain current TC=100C | ID | -23 | A |
| Pulsed drain current | IDM | -100 | A |
| Single pulse avalanche energy | EAS | 345 | mJ |
| Avalanche current | IAS | 28 | A |
| Total power dissipation TA=25C | PD | 104 | W |
| Junction and storage temperature range | TJ ,TSTG | -55 to150 | C |
| Thermal resistance-junction to ambient | RJA | 62 | C/W |
| Thermal resistance-junction to case | RJC | 1.2 | C/W |
2410010000_KIA-Semicon-Tech-KIA35P10AD_C134933.pdf
Related Products
Compact surface mount bridge rectifier YONGYUTAI DB157S with plated solderable leads and ABS housing
Product OverviewThis series of bridge rectifiers features glass passivated die construction, offering a low forward voltage drop and high current/surge current capabilities. Designed for surface mount applications, these rectifiers are constructed from UL 94V-0 rated plastic material. They are ...
Surface Mount Schottky Bridge Rectifier YONGYUTAI MB14F with 40 Volt Reverse Voltage and 1 Amp Forward Current
Product OverviewThis MBF package Surface Mount Schottky Bridge rectifier offers a reverse voltage range of 40 to 200V and a forward current of 1A. It features high surge current capability and is designed for surface mount applications. Ideal for single-phase half-wave 60 Hz rectification with ...
complementary mosfets featuring xnrusemi xr20g10 with n channel and p channel fast switching capabilities
XR20G10 N-Ch and P-Ch Fast Switching MOSFETs Product Description The XR20G10 is a high-performance complementary N-channel and P-channel MOSFET series featuring extreme high cell density. This design provides excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck ...
YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies
Product OverviewThe MG400HF12MIC2 is a high-power IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient for enhanced reliability. The module offers fast ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
