Fast switching N channel MOSFET KIA Semicon Tech KNY8104A 30A 40V avalanche tested for power control
Key Attributes
Model Number:
KNY8104A
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
30A
RDS(on):
16mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
62pF
Number:
1 N-channel
Output Capacitance(Coss):
70pF
Input Capacitance(Ciss):
850pF
Pd - Power Dissipation:
96W
Gate Charge(Qg):
18nC@10V
Mfr. Part #:
KNY8104A
Package:
DFN-8(5x6)
Product Description
30A, 40V N-CHANNEL MOSFET
This N-channel MOSFET offers very low on-resistance (RDS(ON)=12m typ. @VGS=10V), low Crss, and fast switching capabilities. It is 100% avalanche tested and features improved dv/dt capability, making it suitable for PWM applications, power management, and load switches.
Product Attributes
- Brand: KIA
- Origin: KIA SEMICONDUCTORS
Technical Specifications
| Part Number | Package | Brand | Drain-source voltage (VDSS) | Continuous drain current (ID) @ TC=25C | Continuous drain current (ID) @ TC=100C | Pulsed drain current (IDM) | Gate-source voltage (VGS) | Single pulse avalanche energy (EAS) | Power dissipation (PD) @ TC=25C | RDS(on) @ VGS=10V, ID=20A | BVDSS | IDSS @ VDS=40V, VGS=0V | IGSS @ VGS=20V, VDS=0V | VGS(TH) @ VDS=VGS,ID=250uA | RDS(on) @ VGS=4.5V, ID=10A | RG | Ciss @ VDS=20V, VGS=0V, f=1MHz | Coss | Crss | td(on) @ VGS=10V,VDS=30V, RG=4.7, ID=30A | tr | td(off) | tf | Qg @ VDS=20V, ID=30A, VGS=10V | Qgs | Qgd | IS | ISM | VSD @ ISD=20A,VGS=0V,TJ=25C |
| KNG8104A | DFN3*3 | KIA | 40 V | 30 A | 19 A | 120 A | 20 V | 25 mJ | 96 W | 12 m | 40 V | 1 uA | 100 nA | 1.0 - 2.5 V | 16.5 m | 4 | 850 pF | 70 pF | 62 pF | 4 ns | 8 ns | 30 ns | 10 ns | 18 nC | 2.5 nC | 5 nC | 30 A | 120 A | 1.2 V |
| KNY8104A | DFN5*6 | KIA | 40 V | 30 A | 19 A | 120 A | 20 V | 25 mJ | 96 W | 12 m | 40 V | 1 uA | 100 nA | 1.0 - 2.5 V | 16.5 m | 4 | 850 pF | 70 pF | 62 pF | 4 ns | 8 ns | 30 ns | 10 ns | 18 nC | 2.5 nC | 5 nC | 30 A | 120 A | 1.2 V |
| KND8104A | TO-252 | KIA | 40 V | 30 A | 19 A | 120 A | 20 V | 25 mJ | 96 W | 12 m | 40 V | 1 uA | 100 nA | 1.0 - 2.5 V | 16.5 m | 4 | 850 pF | 70 pF | 62 pF | 4 ns | 8 ns | 30 ns | 10 ns | 18 nC | 2.5 nC | 5 nC | 30 A | 120 A | 1.2 V |
2411121110_KIA-Semicon-Tech-KNY8104A_C41369548.pdf
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