Low On Resistance KIA Semicon Tech KCT017N10N MOSFET 100V Drain Source Voltage for Battery Management
Key Attributes
Model Number:
KCT017N10N
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
259A
Operating Temperature -:
-55℃~+155℃
RDS(on):
1.4mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
50pF
Number:
1 N-channel
Output Capacitance(Coss):
1.36nF
Pd - Power Dissipation:
250W
Input Capacitance(Ciss):
10.12nF
Gate Charge(Qg):
176nC@10V
Mfr. Part #:
KCT017N10N
Package:
TOLL-8
Product Description
Product Overview
This product utilizes Geener advanced MOS technology, offering extremely low on-resistance (RDS(on)) and an excellent QgxRDS(on) product (FOM). It is qualified according to JEDEC criteria and is ideal for motor control and drive, battery management, and Uninterruptible Power Supply (UPS) applications.
Product Attributes
- Brand: KMOS Semiconductor
- Certifications: Qualified according to JEDEC criteria
Technical Specifications
| Part # | D VDS (V) | RDS(on) (m) | 100% DVDS Tested | 100% Avalanche Tested | Package | Absolute Maximum Ratings (TC=25C) | Thermal Resistance (C/W) | Electrical Characteristics (Tj=25C) |
| KCB017N10N | 100 | 2 | Yes | Yes | TO-263 | ID: 259A (pulsed), Ptot: 250W, Tj/Tstg: -55 to +150C | RthJC: 0.5, RthJA: 40 | BVDSS: 100V, IDSS: 1A, VGS(th): 2.2V, RDS(on) (VGS=10V, ID=50A): 1.6m |
| KCT017N10N | 100 | 2 | Yes | Yes | TO-263 | ID: 164A (TC=100C), Ptot: 250W, Tj/Tstg: -55 to +150C | RthJC: 0.5, RthJA: 40 | BVDSS: 100V, IDSS: 1A, VGS(th): 2.2V, RDS(on) (VGS=10V, ID=50A): 1.6m |
| KCX017N10N | 100 | 2 | Yes | Yes | TO-263 | ID: 1036A (pulsed), Ptot: 250W, Tj/Tstg: -55 to +150C | RthJC: 0.5, RthJA: 40 | BVDSS: 100V, IDSS: 1A, VGS(th): 2.2V, RDS(on) (VGS=10V, ID=50A): 1.6m |
2507111630_KIA-Semicon-Tech-KCT017N10N_C49328633.pdf
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