P Channel Enhancement Mode MOSFET KUU BSS84 Suitable for Electronic Circuit Applications and Thermal Management
Key Attributes
Model Number:
BSS84
Product Custom Attributes
Drain To Source Voltage:
50V
Current - Continuous Drain(Id):
130mA
RDS(on):
10Ω@5V,100mA
Operating Temperature -:
-
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Number:
1 P-Channel
Pd - Power Dissipation:
200mW
Input Capacitance(Ciss):
73pF@25V
Mfr. Part #:
BSS84
Package:
SOT-23
Product Description
Product Overview
P-Channel Enhancement-Mode MOS FETs designed for various applications. These transistors offer reliable performance with defined electrical characteristics and thermal properties suitable for electronic circuits.
Product Attributes
- Brand: BSS84
- Package Type: SOT-23
Technical Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit | Notes |
| Drain-Source Voltage | BVDSS | -50 | V | |||
| Gate-Source Voltage | VGS | +20 | V | |||
| Drain Current (continuous) | IDR | -130 | mA | |||
| Drain Current (pulsed) | IDRM | -520 | mA | Pulse Width<300s; Duty Cycle<2.0% | ||
| Total Device Dissipation | PD | 200 | mW | TA=25 | ||
| Derate above 25 | 1.8 | mW/ | ||||
| Thermal Resistance Junction to Ambient | RJA | 350 | /W | |||
| Junction and Storage Temperature | TJ,Tstg | -55 | +150 | |||
| Drain-Source Breakdown Voltage | BVDSS | -50 | V | ID=-250uA ,VGS=0V | ||
| Gate Threshold Voltage | VGS(th) | -1.0 | -2.5 | V | ID=-250uA ,VGS= VDS | |
| Diode Forward Voltage Drop | VSD | -1.5 | V | ISD=-200mA ,VGS=0V | ||
| Zero Gate Voltage Drain Current | IDSS | -15 | -60 | uA | VGS=0V, VDS=-50V (TA=125) | |
| Gate Body Leakage | IGSS | +10 | nA | VGS=+20V, VDS=0V | ||
| Static Drain-Source On-State Resistance | RDS(ON) | 10 | ID=-100mA ,VGS=-5V | |||
| Input Capacitance | CISS | 73 | pF | VGS=0V, VDS=-25V,f=1MHz | ||
| Common Source Output Capacitance | COSS | 10 | pF | VGS=0V, VDS=-25V,f=1MHz | ||
| Turn-ON Time | t(on) | 5 | ns | VDS=-30V, ID=-270mA, RGEN=6 | ||
| Turn-OFF Time | t(off) | 20 | ns | VDS=-30V, ID=-270mA, RGEN=6 | ||
| Reverse Recovery Time | trr | 10 | ns | ISD=-100mA, VGS=0V |
2410121507_KUU-BSS84_C5119490.pdf
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