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quality Power KIA Semicon Tech KPY6115A P Channel MOSFET Suitable for POL and SMPS Second Stage Rectifiers factory
quality Power KIA Semicon Tech KPY6115A P Channel MOSFET Suitable for POL and SMPS Second Stage Rectifiers factory

Power KIA Semicon Tech KPY6115A P Channel MOSFET Suitable for POL and SMPS Second Stage Rectifiers

Key Attributes
Model Number: KPY6115A
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
10A
RDS(on):
300mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
408pF
Pd - Power Dissipation:
89W
Input Capacitance(Ciss):
2.109nF
Output Capacitance(Coss):
513pF
Gate Charge(Qg):
35nC@10V
Mfr. Part #:
KPY6115A
Package:
DFN-8(5x6)
Product Description

Product Overview

This P-CHANNEL MOSFET features advanced high cell density Trench technology, offering low RDS(ON) for minimal conductive loss and low Gate Charge for fast switching. It boasts low thermal resistance and is 100% Avalanche and DVDS tested. Ideal for MB/VGA Vcore, SMPS 2nd Synchronous Rectifier, POL applications, and BLDC Motor drivers.

Product Attributes

  • Brand: KIA
  • Origin: N/A
  • Material: N/A
  • Color: N/A
  • Certifications: N/A

Technical Specifications

ParameterSymbolConditionsMin.Typ.Max.UnitPart Number
Drain-Source Breakdown VoltageBVDSSVGS=0V, ID=-250uA-150--VKPY6115A / KPD6115A
Drain-Source On-State ResistanceRDS(ON)VGS=-10V, ID=-5A-300320mKPY6115A / KPD6115A
Gate Threshold VoltageVGS(th)VGS=VDS, ID=-250uA-2.0--4.0VKPY6115A / KPD6115A
Drain-Source Leakage CurrentIDSSVDS=-150V,VGS=0V,TJ=25C---1uAKPY6115A / KPD6115A
Gate-Source Leakage CurrentIGSSVGS=20V, VDS=0V--100nAKPY6115A / KPD6115A
Forward TransconductancegfsVDS=-5V, ID=-3A-11-SKPY6115A / KPD6115A
Gate ResistanceRgVDS=0V, VGS=0V, f=1MHz-5.7-KPY6115A / KPD6115A
Input CapacitanceCissVDS=-40V, VGS=0V , f=1MHz-2109-pFKPY6115A / KPD6115A
Output CapacitanceCoss-513-pFKPY6115A / KPD6115A
Reverse Transfer CapacitanceCrss-408-pFKPY6115A / KPD6115A
Total Gate ChargeQgVDS=-50V, VGS=-10V , ID=-3A-35-nCKPY6115A / KPD6115A
Gate-Source ChargeQgs-6-nCKPY6115A / KPD6115A
Gate-Drain ChargeQg d-8.5-nCKPY6115A / KPD6115A
Turn-On Delay TimeTd(on)VDD=-50V,VGS=-10V, RG=3,ID=-3A-28-nsKPY6115A / KPD6115A
Rise TimeTr-30-nsKPY6115A / KPD6115A
Turn-Off Delay TimeTd(off)-230-nsKPY6115A / KPD6115A
Fall TimeTf-130-nsKPY6115A / KPD6115A
Continuous Source CurrentISVG=VD=0V, Force Current---10AKPY6115A / KPD6115A
Diode Forward VoltageVSDVGS=0V, IS=-5A , TJ=25C---1.2VKPY6115A / KPD6115A
Reverse Recovery TimetrrIF=-5A , TJ=25C dI/dt=100A/s-34-nSKPY6115A / KPD6115A
Reverse Recovery ChargeQrr-32-nCKPY6115A / KPD6115A
Drain-to-Source VoltageVDS-150--VKPY6115A / KPD6115A
Gate-to-Source VoltageVGS20--VKPY6115A / KPD6115A
Continuous Drain CurrentIDTC=25C, VGS @ -10V-10--AKPY6115A / KPD6115A
Continuous Drain CurrentIDTC=100C, VGS @ -10V-6.4--AKPY6115A / KPD6115A
Pulsed Drain CurrentIDM-40--AKPY6115A / KPD6115A
Total Power DissipationPDTC=25C-89-WKPY6115A / KPD6115A
Total Power DissipationPDTC=100C-35-WKPY6115A / KPD6115A
Avalanche EnergyEAS-30.2-mJKPY6115A / KPD6115A
Avalanche CurrentIAS-11--AKPY6115A / KPD6115A
Operating Junction and Storage Temperature RangeTJ, TSTG-55-150CKPY6115A / KPD6115A
Thermal Resistance, Junction-to-AmbientRJA-20-C/WKPY6115A / KPD6115A
Thermal Resistance, Junction-to-CaseRJC-1.4-C/WKPY6115A / KPD6115A

2507111630_KIA-Semicon-Tech-KPY6115A_C49328615.pdf

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