power MOSFET KIA Semicon Tech KCY3406A suitable for inverter system and power management applications
Key Attributes
Model Number:
KCY3406A
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
80A
RDS(on):
8.5mΩ@10V,13.5A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
22pF@30V
Number:
1 N-channel
Pd - Power Dissipation:
63W
Input Capacitance(Ciss):
1.065nF@30V
Gate Charge(Qg):
16.8nC@10V
Mfr. Part #:
KCY3406A
Package:
DFN5x6-8
Product Description
Product Overview
The KCX3406A is an N-channel enhancement mode power MOS field effect transistor utilizing KIA's LVMOS technology. Its advanced process and cell structure are optimized for minimal on-state resistance and superior switching performance. This device is ideal for secondary synchronous rectification and power management in inverter systems.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Part Number: KCX3406A
- Package: DFN5*6
- Origin: KIA
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 60 | -- | -- | V |
| Gate-to-Source Leakage Current | IGSS | VGS=20V, VDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | VGS(TH) | VDS=VGS, ID=250uA | 1.0 | 2.0 | 3.0 | V |
| Static Drain-to-Source On-Resistance | RDS(ON) | VGS=10V, ID=13.5A | -- | 8.5 | 9.5 | m |
| Static Drain-to-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=11.5A | -- | 13 | 15 | m |
| Input Capacitance | Ciss | F=1.0MHzVGS=0V, VDS=30V | -- | 1065 | -- | pF |
| Output Capacitance | Coss | F=1.0MHzVGS=0V, VDS=30V | -- | 430 | -- | pF |
| Reverse Transfer Capacitance | Crss | F=1.0MHzVGS=0V, VDS=30V | -- | 22 | -- | pF |
| Turn-on Delay Time | td(ON) | VDD=30V, VGS=10V RG=3,ID=13.5A | -- | 8 | -- | nS |
| Rise Time | trise | VDD=30V, VGS=10V RG=3,ID=13.5A | -- | 54 | -- | nS |
| Turn-Off Delay Time | td(OFF) | VDD=30V, VGS=10V RG=3,ID=13.5A | -- | 19 | -- | nS |
| Fall Time | tfall | VDD=30V, VGS=10V RG=3,ID=13.5A | -- | 8.8 | -- | nS |
| Total Gate Charge | Qg | VDD=48V,VGS=10V, ID=13.5A | -- | 16.8 | -- | nC |
| Gate-to-Source Charge | Qgs | VDD=48V,VGS=10V, ID=13.5A | -- | 5.9 | -- | nC |
| Gate-to-Drain (Miller) Charge | Qg | VDD=48V,VGS=10V, ID=13.5A | -- | 2.7 | -- | nC |
| Continuous Source Current | ISD | -- | -- | 80 | A | |
| Pulsed Source Current | ISM | -- | -- | 240 | A | |
| Diode Forward Voltage | VSD | IS=13.5A, VGS=0V | -- | -- | 1.4 | V |
| Reverse Recovery Time | trr | IS=13.5A,VGS=0V, dIF/dt=100A/us | -- | 52 | -- | ns |
| Reverse Recovery Charge | Qrr | IS=13.5A,VGS=0V, dIF/dt=100A/us | -- | 0.05 | -- | nC |
| Continuous Drain Current | ID | TC=25C | -- | -- | 80 | A |
| Continuous Drain Current | ID | TC=100C | -- | -- | 48 | A |
| Pulsed Drain Current | IDM | at VGS=10V | -- | -- | 240 | A |
| Power Dissipation | PD | (TC=25C) | -- | -- | 63 | W |
| Derating Factor above 25C | -- | -- | 0.5 | W/C | ||
| Single Pulsed Avalanche Energy | EAS | Note 1 | -- | 81 | -- | mJ |
| Operation Junction Temperature Range | TJ | -55 | -- | 150 | C | |
| Storage Temperature Range | TSTG | -55 | -- | 150 | C | |
| Thermal Resistance, Junction-to-Case | RJC | -- | 2.0 | -- | C/W | |
| Thermal Resistance, Junction-to-Ambient | RJA | -- | 62 | -- | C/W |
2410121321_KIA-Semicon-Tech-KCY3406A_C5156065.pdf
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