Power MOSFET KIA Semicon Tech KNS5610A featuring trench technology and low gate charge for power control
Key Attributes
Model Number:
KNS5610A
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
-
Operating Temperature -:
-55℃~+150℃
RDS(on):
115mΩ@10V,5A
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
37pF
Number:
-
Output Capacitance(Coss):
60pF
Input Capacitance(Ciss):
1.535nF
Pd - Power Dissipation:
22.7W
Gate Charge(Qg):
26.2nC@10V
Mfr. Part #:
KNS5610A
Package:
SOT-89
Product Description
Product Overview
The KXN5610A is a high-performance N-channel MOSFET from KIA Semiconductors, featuring extreme high cell density for excellent RDS(ON) and gate charge. This trench technology MOSFET is designed for synchronous buck converter applications, offering advantages like low gate charge and excellent Cdv/dt effect. It meets RoHS and green product requirements.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Part Number: KXN5610A
- Package: SOT-89
- Certifications: RoHS, Green product
Technical Specifications
| Parameter | Symbol | Rating | Units | Conditions | Typ | Max |
| Drain-source voltage | VDSS | 100 | V | |||
| Gate-source voltage | VGS | +20 | V | |||
| Continuous drain current | ID | 7* | A | VGS@10V, TC=25C | ||
| Continuous drain current | ID | 5.2 | A | VGS@10V, TC=100C | ||
| Continuous drain current | ID | 2 | A | VGS@10V, TA=25C | ||
| Continuous drain current | ID | 1.4 | A | VGS@10V, TA=100C | ||
| Pulsed drain current | IDM | 14 | A | |||
| Power dissipation | PD | 22.7 | W | TC=25C | ||
| Power dissipation | PD | 2 | W | TA=25C | ||
| Avalanche current | IAS | 6 | A | |||
| Operating junction and storage temperature range | TJ ,TSTG | -55 to150 | C | |||
| Thermal resistance junction-case | RJC | - | C/W | 2.6 | ||
| Thermal resistance junction-ambient | RJA | - | C/W | 48 | ||
| Drain-source breakdown voltage | BVDSS | 100 | V | VGS=0V,ID=250A | ||
| BVDSS temperature coefficient | BVDSS/TJ | - | V/C | Reference 25, ID=1mA | 0.098 | |
| Drain-source on-resistance | RDS(on) | - | m | VGS=10V,ID=5A | 98 | 115 |
| Drain-source on-resistance | RDS(on) | - | m | VGS=4.5V,ID=3A | 110 | 125 |
| Gate threshold voltage | VGS(TH) | - | V | VDS= VGS,ID=250uA | 1.0 | 3.0 |
| Gate threshold voltage | VGS(TH) | - | V | VDS= VGS,ID=250uA | 1.85 | |
| VGS(TH) temperature coefficient | VGS(TH) | - | mV/C | -4.57 | ||
| Drain-source leakage current | IDSS | - | A | VDS=80V, VGS=0V, TJ=25C | - | 1 |
| Drain-source leakage current | IDSS | - | A | VDS=80V, VGS=0V, TJ=55C | - | 5 |
| Gate-source forward leakage | IGSS | - | nA | VGS=+20V, VDS=0V | - | +100 |
| Forward transconductance | gfs | - | S | VDS=5V, ID=10A | 13 | |
| Gate resistance | Rg | - | VDS=0V, VGS=0V, f=1MHz | 1.8 | ||
| Total gate charge(10V) | Qg | - | nC | VDS=80V, ID=10A, VGS=10V | 26.2 | |
| Gate-source charge | Qgs | - | 4.6 | |||
| Gate-drain charge | QgD | - | 5.1 | |||
| Turn-on delay time | td(on) | - | ns | VDD=50V, ID=10A, RG=3.3,VGS=10V | 4.2 | |
| Rise time | tr | - | ns | 8.2 | ||
| Turn-off delay time | td(off) | - | ns | 35.6 | ||
| Fall time | tf | - | ns | 9.6 | ||
| Input capacitance | Ciss | - | pF | VDS=15V,VGS=0V, f=1MHz | 1535 | |
| Output capacitance | Coss | - | pF | 60 | ||
| Reverse transfer capacitance | Crss | - | pF | 37 | ||
| Continuous source current | IS | 7 | A | VD=VG=0V, Force current | ||
| Maximum pulsed current | ISM | 49 | A | |||
| Diode forward voltage | VSD | - | V | IS=1A, VGS=0V, TJ=25C | - | 1.3 |
| Reverse recovery time | trr | - | ns | IF=10A,dI/dt=100A/s, TJ=25C | 37 | |
| Reverse recovery charge | Qrr | - | nC | 27.3 |
2409302202_KIA-Semicon-Tech-KNS5610A_C135559.pdf
Related Products
High Reliability Surface Mounted Rectifier ZHIDE SS510A Molded Plastic Epoxy UL 94V 0 Flame Retardant
Product OverviewThe SS52A-SS520A series are surface-mounted Schottky barrier rectifiers designed for high-reliability applications. They offer low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering. These rectifiers are compliant with RoHS standards, ...
Glass passivated chip diode YONGYUTAI MB8S offering performance in power supply and rectification circuits
Product OverviewThis series of glass passivated chip junction diodes offers a wide range of reverse voltage capabilities from 100V to 1000V, with a forward current of 0.8A and high surge current capability. Designed for surface mount applications, these diodes are suitable for various power supply ...
Surface mount ZHIDE ES5D rectifier with low leakage current and 100 volt maximum DC blocking voltage
Product OverviewThe ES5A-ES5M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, with guaranteed high-temperature soldering. These rectifiers are RoHS compliant ...
Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD
Product OverviewThe MG150HF12TLC1 S-M409 is a high-performance IGBT module designed for demanding power electronics applications. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short circuit capability, and an integrated ultra-fast & soft ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
