Power Transistor N CHANNEL MOSFET with 3.5A Drain Current KIA Semicon Tech KIA2306 Low On Resistance
Key Attributes
Model Number:
KIA2306
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
3.5A
Operating Temperature -:
-
RDS(on):
57mΩ@10V,3.5A
Gate Threshold Voltage (Vgs(th)):
1.8V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
60pF
Number:
1 N-channel
Input Capacitance(Ciss):
555pF
Output Capacitance(Coss):
120pF
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
20nC@10V
Mfr. Part #:
KIA2306
Package:
SOT-23
Product Description
Product Overview
This N-CHANNEL MOSFET from KIA SEMICONDUCTORS offers a 30V drain-source voltage and a continuous drain current of 3.5A. It features low on-resistance (RDS(on)) at specified gate-source voltages, making it suitable for power applications. The device is 100% Rg tested.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Product Type: N-CHANNEL MOSFET
- Model Number: 2306
Technical Specifications
| Parameter | Symbol | Rating/Condition | Units | Typical | Maximum | |
| 1. Features | ||||||
| Drain-source voltage | VDS | 30V | V | |||
| On-resistance @ VGS=10V, ID=3.5A | RDS(on) | 0.057 | ||||
| On-resistance @ VGS=4.5V, ID=2.8A | RDS(on) | 0.094 | ||||
| 100% Rg tested | ||||||
| 3. Absolute Maximum Ratings | ||||||
| Drain-source voltage | VDS | V | 30 | |||
| Gate-source voltage | VGS | V | +20 | |||
| Drain current continuous (TA=25C) | ID | a, b | A | 3.5 | ||
| Drain current continuous (TA=70C) | ID | a, b | A | 2.8 | ||
| Pulsed drain current | IDM | a | A | 16 | ||
| Continuous source current (diode conduction) | IS | a, b | A | 1.25 | ||
| Power dissipation (TA=25C) | PD | a, b | W | 1.25 | ||
| Power dissipation (TA=70C) | PD | a, b | W | 0.8 | ||
| Junction and storage temperature range | TJ ,TSTG | C | -55 | 150 | ||
| Maximum junction-ambient thermal resistance (steady state) | RthJA | a | C/W | 130 | ||
| 4. Electrical Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VDS=0V,ID=250A | V | 30 | ||
| Gate threshold voltage | VGS(th) | VDS=VGS, ID=250A | V | 1 | 1.8 | |
| Gate-body leakage | IGSS | VGS=+20V, VDS=0V | nA | +100 | ||
| Zero gate voltage drain current | IDSS | VDS=25V, VGS=0V | A | 1 | ||
| On-state drain current | ID(on) | VDS>4.5V, VGS=10V | A | 6 | ||
| On-state drain current | ID(on) | VDS>4.5V, VGS=4.5V | A | 4 | ||
| Static drain-source on-resistance | RDS(on) | VGS=10V,ID=3.5A | 0.057 | |||
| Static drain-source on-resistance | RDS(on) | VGS=4.5V,ID=2.8A | 0.094 | |||
| Forward transconductance | gfs | VDS=4.5V, ID=-3.5A | S | 6.9 | ||
| Diode forward voltage | VSD | VGS=0V,IS=1.25A | V | 0.8 | 1.2 | |
| Total gate charge | Qg | VDS=15V, VGS=5V,ID=3.5A | nC | 4.2 | 7 | |
| Total gate charge | Qgt | VDS=15V, VGS=10V ID=3.5A | nC | 8.5 | 20 | |
| Gate-source charge | Qgs | 1.9 | ||||
| Gate-drain charge | Qgd | 1.35 | ||||
| Gate resistance | RG | 0.5 | 2.4 | |||
| Input capacitance | Ciss | VDS=15V,VGS=0V, f=1MHz | pF | 555 | ||
| Output capacitance | Coss | pF | 120 | |||
| Reverse transfer capacitance | Crss | pF | 60 | |||
| Turn-on delay time | td(on) | VDD=15V, ID =1A, RL=15, RG=6, VGEN=10V | ns | 9 | 20 | |
| Rise time | tr | ns | 7.5 | 18 | ||
| Turn-off delay time | td(off) | ns | 17 | 35 | ||
| Fall time | tf | ns | 5.2 | 12 | ||
2409302332_KIA-Semicon-Tech-KIA2306_C116006.pdf
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