P Channel MOSFET KUU 9435 Featuring Trench Technology and Low Gate Voltage for Power Management
Key Attributes
Model Number:
9435
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.3A
RDS(on):
85mΩ@4.5V
Operating Temperature -:
-55℃~+150℃@(Tj)
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
80pF
Number:
1 P-Channel
Output Capacitance(Coss):
120pF
Input Capacitance(Ciss):
845pF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
22nC@10V
Mfr. Part #:
9435
Package:
SOP-8
Product Description
Product Description
The 9435 is a P-Channel Enhancement Mode Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 4.5V. This MOSFET is designed for high power and current handling capabilities and is available as a lead-free product. It is suitable for applications such as battery switches, load switches, and power management.
Product Attributes
- Brand: 9435 (assumed from marking)
- Certifications: Lead free product is acquired
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | TA=25, VGS=-5.3V | -5.3 | A | ||
| Drain Current-Pulsed | IDM | (Note 1) | -20 | A | ||
| Maximum Power Dissipation | PD | TA=25 | 2.0 | W | ||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | |||
| Thermal Characteristic | ||||||
| Thermal Resistance, Junction-to-Ambient | RJA | (Note 2) | 50 | /W | ||
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250A | -30 | -33 | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=-24V,VGS=0V | - | -1 | A | |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | - | 100 | nA | |
| On Characteristics (Note 3) | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=-250A | -1.0 | - | - | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-10V, ID=-5.3A | 51 | 57 | m | |
| VGS=-4.5V, ID=-4.2A | 75 | 85 | m | |||
| Forward Transconductance | gFS | VDS=-15V,ID=-5.3A | - | - | S | |
| Dynamic Characteristics (Note4) | ||||||
| Input Capacitance | Ciss | 845 | - | pF | ||
| Output Capacitance | Coss | 120 | - | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=-15V,VGS=0V, F=1.0MHz | 80 | - | pF | |
| Switching Characteristics (Note 4) | ||||||
| Turn-on Delay Time | td(on) | VDD=-25V, ID=-2A, VGS=-10V,RGEN=6 | 17 | - | nS | |
| Turn-on Rise Time | tr | 18 | - | nS | ||
| Turn-Off Delay Time | td(off) | 60 | - | nS | ||
| Turn-Off Fall Time | tf | 27 | - | nS | ||
| Gate Charge | ||||||
| Total Gate Charge | Qg | VDS=-15V,ID=-4.6A, VGS=-10V | 22 | - | nC | |
| Gate-Source Charge | Qgs | 4.5 | - | nC | ||
| Gate-Drain Charge | Qgd | 2 | - | nC | ||
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=-2.0A (Note 3) | -1.2 | -1.5 | V | |
2410121913_KUU-9435_C2922758.pdf
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